Terahertz electronics: Application of wave propagation and nonlinear processes

Aghasi, Hamidreza; Naghavi, S. M. Hossein; Taba, Morteza Tavakoli; Aseeri, Mohammed; Cathelin, Andreia; Afshari, Ehsan

doi:10.1063/1.5129403

Cited by 36 publications

(24 citation statements)

References 156 publications

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“…  (11) The latest equation introduces a significant technical meaning of the induced THz rectifications at both source and drain edges of the used THz FET detectors. Equation ( 11) is showing a response dependence that is like the response of the Schottky diode detectors given by: ( ) (…”

Section: Zero-drain Biased Thz Fet Detectorsmentioning

confidence: 99%

Nonlinear Analytical Model of Localized Sub-THz and THz Rectifications in FET Power Detectors

Elkhatib¹

2021

Preprint

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<div>A nonlinear analytical model for THz FET power detectors based on their distributed RC network is presented. This empirical model works well for both drain-unbiased and drain-biased THz FET responses. The physics-based analysis reveals that localized THz rectifications in long channel transistors may be mathematically expressed in the same way as regular RF frequency rectifications of a single lumped device. However, the one lumped FET model can’t work properly at THz frequencies without correct definitions of THz signals on its terminals and independently considers localized rectifications on the source and drain sides. An improved compact one lumped THz FET power detector model with additional Schottky diodes at the source and drain terminals is presented. THz FET detector can also perform a simultaneous self-amplification (active rectification) of the localized THz rectified dc signal when operates in the saturation regime beyond its unity gain frequency. A novel analytical expression for the localized THz dc rectified response is developed for FETs operating in the saturation regime. The presented physics-based model agrees excellently with the measured experimental results of GaAs HEMT transistors at 1.6THz under arbitrary biasing conditions. Many novel electronic designs can be implemented for Millimeter-wave and THz technologies based on the physical FET's nonlinear nature in this frequency range</div>

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Section: Zero-drain Biased Thz Fet Detectorsmentioning

confidence: 99%

Nonlinear Analytical Model of Localized Sub-THz and THz Rectifications in FET Power Detectors

Elkhatib¹

2021

Preprint

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“…[4,5] Recently, the promise of terahertz waves in achieving high data rates, reaching terabits per second (Tbps), has motivated researchers from both electronics and photonics realm of electromagnetic spectrum to bridge the terahertz technological gap. [6,7] This has led to a…”

Section: Introductionmentioning

confidence: 99%

Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices

Pitchappa

Kumar

Prakash

et al. 2021

Adv Funct Materials

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Phase change materials provide unique reconfigurable properties for photonic applications that mainly arise from their exotic characteristic to reversibly switch between the amorphous and crystalline nonvolatile phases. Optical pulse based reversible switching of nonvolatile phases is exploited in various nanophotonic devices. However, large area reversible switching is extremely challenging and has hindered its translation into a technologically significant terahertz spectral domain. Here, this limitation is circumvented by exploiting the semiconducting nature of germanium antimony telluride (GST) to achieve dynamic terahertz control at picosecond timescales. It is also shown that the ultrafast response can be actively altered by changing the crystallographic phase of GST. The ease of fabrication of phase change materials allows for the realization of a variable ultrafast terahertz modulator on a flexible platform. The rich properties of phase change materials combined with the diverse functionalities of metamaterials and all-optical ultrafast control enables an ideal platform for design of efficient terahertz communication devices, terahertz neuromorphic photonics, and smart sensor systems.

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“…This has changed, however, and the extensive search for materials in recent years begins to cover the demands of the newly developed field of THz electronics. By now, the field of THz technologies is one of the most promising directions of the development of the electronics 2 . The recently promoted 5G standard for broadband cellular networks operates at frequencies of tens of gigahertz.…”

Section: Introductionmentioning

confidence: 99%

Lead-substituted barium hexaferrite for tunable terahertz optoelectronics

Alyabyeva

Prokhorov

Винник

et al. 2021

Preprint

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In recent years, due to their outstanding dielectric and magnetic properties, hexagonal ferrites (hexaferrites) have attracted considerable interest for developing electronic components of next-generation communication systems. The complex crystal structure of hexaferrites and critical dependences of their electric and magnetic properties on external factors, like magnetic or electric fields, pressure or doping, open ample opportunities for targeted tuning of these properties when designing specific devices. To that end, we explored the electromagnetic properties of the Pb-substituted barium hexaferrite, Ba1-xPbxFe12O19, a compound featuring an extremely rich set of physical phenomena that are inherent in the dielectric and magnetic subsystems of the material and are expected to have significant effect on its electromagnetic response at radio and terahertz frequencies. We performed the first detailed measurements of the AC response of single-crystalline Ba1-xPbxFe12O19 in an extremely broad spectral range from 1 Hz to 240 THz down to temperatures as low as 5 K. We fully characterized numerous microscopic phenomena that determine the broad-band dielectric response of the compound, and we analyzed their nature. This includes temperature-activated radiofrequency relaxations that were attributed to the dynamic response of magnetic/dielectric domains. The terahertz response is dominated by a ferroelectric-like soft mode with an unusual temperature behavior that we explain by means of a microscopic model. Several narrower terahertz excitations are associated with electronic transitions between the fine-structure components of the Fe2+ground state. Narrow resonances detected in the gigahertz region are presumably of magneto-electric origin. The obtained data on diverse but controllable electromagnetic properties of Ba1-xPbxFe12O19 compounds provides the researchers with information that makes the entire class of hexaferrites materials attractive for manufacturing electronic devices for the radiofrequency and terahertz ranges, such as absorbing coatings, anti-reflective coatings, absorbers, electromagnetic shields, antennas, phase shifters, filters, resonators, modulators, etc.

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Terahertz electronics: Application of wave propagation and nonlinear processes

Cited by 36 publications

References 156 publications

Nonlinear Analytical Model of Localized Sub-THz and THz Rectifications in FET Power Detectors

Nonlinear Analytical Model of Localized Sub-THz and THz Rectifications in FET Power Detectors

Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices

Lead-substituted barium hexaferrite for tunable terahertz optoelectronics

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