Abstract:<div>A nonlinear analytical model for THz FET power detectors based on their distributed RC network is presented. This empirical model works well for both drain-unbiased and drain-biased THz FET responses. The physics-based analysis reveals that localized THz rectifications in long channel transistors may be mathematically expressed in the same way as regular RF frequency rectifications of a single lumped device. However, the one lumped FET model can’t work properly at THz frequencies without correct def… Show more
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