“…[11][12][13][14]. In graphene, the ratchet effect can be obtained in monolayers with asymmetric micropatterns [15][16][17], layers with built-in structure inversion asymmetry [18] (in this case it is typically called photogalvanic effect [11]), short-channel devices, like field effect transistors with asymmetric boundary conditions [1,[19][20][21][22][23][24][25], as well as in structures with asymmetric grating type of electrodes [26][27][28][29][30][31]. Besides their fundamental significance, the two latter types of ratchets are extremely important for applications, since they provide a very promising route towards fast, sensitive, and gate-tunable detection of THz radiation at room temperature.…”