Terahertz and Infrared Quantum Photodetectors

Rostami, Ali; Rasooli, H.; Baghban, Hamed

doi:10.1007/978-3-642-15793-6_2

Cited by 3 publications

(3 citation statements)

References 133 publications

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“…The lack of powerful sources, sensitive detectors and other measurement equipment had limited the possibility for research in the THz domain despite important applications in the fields of spectroscopy, imaging, communication and security [ 1 , 2 , 3 , 4 ]. Since the late 20th century, scientists and researchers have worked rigorously towards the development of more powerful sources, low-noise detectors and measurement systems to bridge this gap [ 5 , 6 ]. An important application of Terahertz detectors is the diagnostics at THz-generating particle accelerator facilities (Free-Electron Lasers, synchrotrons) [ 7 , 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz

Yadav

Ludwig

Faridi

et al. 2023

Sensors

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We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from 1.9 to 5.56 THz. We used two measurement techniques in order to discriminate the sub-ns-scale (via a 20 GHz oscilloscope) and the ms-scale (using the lock-in technique) responsivity. While the lock-in measurements basically contain all rectification effects, the sub-ns-scale detection with the oscilloscope is not sensitive to slow bolometric effects caused by changes of the IV characteristic due to temperature. The noise equivalent power (NEP) is 10 pW/Hz in the frequency range from 0.2 to 0.6 THz and 17 pW/Hz at 1.2 THz and increases to 0.9 μW/Hz at 5.56 THz, which is at the state of the art for room temperature zero-bias Schottky diode-based THz detectors with non-resonant antennas. The voltage and current responsivity of ∼500 kV/W and ∼100 mA/W, respectively, is demonstrated over a frequency range of 0.2 to 1.2 THz with the table-top system.

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Section: Introductionmentioning

confidence: 99%

State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz

Yadav

Ludwig

Faridi

et al. 2023

Sensors

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“…Thus, for monitoring objects in dark conditions, the infrared spectrum must be detected. It is common to apply the 3–5 µm infrared window for military uses, 8–12 µm window for thermal imaging and military uses, and > 20 µm for THz uses such as medical diagnostics 3 .…”

Section: Introductionmentioning

confidence: 99%

“…However, growing, processing, and fabricating into other devices for such small-bandgap semiconductors are more difficult than large-bandgap ones 12 . Therefore, because of critical disadvantages, including growth-related difficulties, the cryogenic cooling requirement in mid and long infrared spectral ranges 13 , high-cost manufacturing and also for improving the detecting parameters at room temperature 3 , a lot of effort has done to develop photodetector structures from bulk to the quantum-based photodetectors, particularly quantum dot photodetectors 14 . In the QD structures, 3-D confinement has provided some interesting properties, including higher absorption coefficient, lower dark current, narrower spectral width absorption, higher photoconductive gain, size-dependent detectivity, and low-temperature processing [15][16][17][18] .…”

mentioning

confidence: 99%

High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera

Dortaj

Dolatyari

Zarghami

et al. 2021

Sci Rep

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Infrared (IR) cameras based on semiconductors grown by epitaxial methods face two main challenges, which are cost and operating at room temperature. The alternative new technologies which can tackle these two difficulties develop new and facile material and methods. Moreover, the implementation of high speed camera, which makes high resolution images with normal methods, is very expensive. In this paper, a new nanostructure based on a cost-effective solution processed technology for the implementation of the high-speed mid-infrared light camera at room temperature is proposed. To this end, the chemically synthesized PbSe–PbI2 core–shell Quantum Dots (QDs) are used. In this work, a camera including 10 × 10 pixels is fabricated and synthesized QDs spin-coated on interdigitated contact (IDC) and then the fabricated system passivated by epoxy resin. Finally, using an electronic reading circuit, all pixels are converted to an image on the monitor. To model the fabricated camera, we solved Schrodinger–Poisson equations self consistently. Then output current from each pixel is modeled based on semiconductor physics and dark and photocurrent, as well as Responsivity and Detectivity, are calculated. Then the fabricated device is examined, and dark and photocurrents are measured and compared to the theoretical results. The obtained results indicate that the obtained theoretical and measured experimental results are in good agreement together. The fabricated detector is high speed with a rise time of 100 ns. With this speed, we can get 10 million frames per second; this means we can get very high-resolution images. The speed of operation is examined experimentally using a chopper that modulates input light with 50, 100, 250, and 500 Hz. It is shown that the fabricated device operates well in these situations, and it is not limited by the speed of detector. Finally, for the demonstration of the proposed device operation, some pictures and movies taken by the camera are attached and inserted in the paper.

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