TERA-MIR radiation: materials, generation, detection and applications II

Pereira, Mauro

doi:10.1007/s11082-015-0146-x

Cited by 15 publications

(8 citation statements)

References 16 publications

(12 reference statements)

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“…The development of frequency multipliers based on the semiconductor superlattices (SSLs) contribute toward the development of efficient devices which can generate high-frequency radiation at gigahertz (GHz) and terahertz (THz) frequencies. [1][2][3][4][5][6][7][8] Typically, the spectral region below 0.1 THz is covered by devices such as Schottky diode multipliers, 9 InP Gunn sources and oscillators, 10,11 Impatt diodes [11][12] and superlattice electron devices (SLED) 13 that all rely on electron transport. In particular, SLED has attracted much attention because it can operate as an efficient millimeter-wave oscillator utilizing the underlying physical processes of Bloch oscillations and domain formations 3 which are involved in miniband transport delivering high power output in the 240-320 GHz range.…”

Section: Introductionmentioning

confidence: 99%

Potential and limits of superlattice multipliers coupled to different input power sources

Apostolakis

Pereira

2019

J. Nanophoton.

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A theoretical study is presented to assess the performance of semiconductor superlattice multipliers as a function of the currently available input power sources. The prime devices which are considered as input power sources are Impatt diodes, InP Gunn devices, superlattice electron devices and Backward Wave Oscillator sources. These sources have been successfully designed to deliver input radiation frequencies in the range from 0.1 to 0.5 THz. We discuss the harmonic power generation of both odd and even harmonics by implementing an ansatz solution stemmed from a hybrid approach combining nonequilibrium Green's functions and the Boltzmann kinetic equation.

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Section: Introductionmentioning

confidence: 99%

Potential and limits of superlattice multipliers coupled to different input power sources

Apostolakis

Pereira

2019

J. Nanophoton.

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“…Furthermore, band gap engineering by incorporating Sb ion is known to deliver emission at the spectral range between 3 and 5 µm. Thus, devices based on these alloys are potential candidates in medical diagnostics, free space communication and atmospheric pollution sensors [12,13]. Also, strained InAsNSb epilayers on InAs substrate for LED applications have been reported [6].…”

Section: Introductionmentioning

confidence: 99%

Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Oriaku

Spencer

et al. 2017

J. Nanophoton

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In this paper, we calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5 µm. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.

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“…This leads to an efficient numerical tool to investigate new materials, starting e.g. from ab initio calculations and has potential for a major impact in the development of new materials with applications from the THz and Mid Infrared to the Visible ranges (Pereira 2015). The superlattices are described as anisotropic media characterized by effective masses parallel and perpendicular to the growth direction (Pereira 1995).…”

Section: Introductionmentioning

confidence: 99%