2019
DOI: 10.1117/1.jnp.13.036017
|View full text |Cite
|
Sign up to set email alerts
|

Potential and limits of superlattice multipliers coupled to different input power sources

Abstract: A theoretical study is presented to assess the performance of semiconductor superlattice multipliers as a function of the currently available input power sources. The prime devices which are considered as input power sources are Impatt diodes, InP Gunn devices, superlattice electron devices and Backward Wave Oscillator sources. These sources have been successfully designed to deliver input radiation frequencies in the range from 0.1 to 0.5 THz. We discuss the harmonic power generation of both odd and even harm… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
13
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
5
2

Relationship

1
6

Authors

Journals

citations
Cited by 22 publications
(15 citation statements)
references
References 49 publications
1
13
0
Order By: Relevance
“…The experiments in Fig. 3 clearly demonstrate that the nonlinearities can be controlled and enhanced as predicted by the theory, but note that the structural defects, imperfect interfaces 7 , 8 , 19 , 20 and possible charge field domains make the experimental I–V different to the ideal I–V used in the theory, see Fig. 2 c, so it is normal that the nonlinear response would have some quantitative deviations from the ideal solution.…”
Section: Resultsmentioning
confidence: 83%
See 2 more Smart Citations
“…The experiments in Fig. 3 clearly demonstrate that the nonlinearities can be controlled and enhanced as predicted by the theory, but note that the structural defects, imperfect interfaces 7 , 8 , 19 , 20 and possible charge field domains make the experimental I–V different to the ideal I–V used in the theory, see Fig. 2 c, so it is normal that the nonlinear response would have some quantitative deviations from the ideal solution.…”
Section: Resultsmentioning
confidence: 83%
“…The experiments have been performed with GHz input leading to THz output, demonstrating full control and enhancement of the nonlinearities in terms of applied voltage and power, in a regime that can be studied with input fields from compact devices 19,20 . A clear-cut proof of the role of asymmetric flow in our own data is highlighted in Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…where the speed of light is c 2 = 1/µ 0 0 . Simplifying the Boltzmann equation for carrier transport with relaxation approximation, one can show that if the superlattice is illuminated with combined static and monochromatic fields [1,28,[38][39][40][41][42],…”
Section: Methodsmentioning
confidence: 99%
“…Strong excitonic effects can also play a role under well-defined conditions [35][36][37]. All these processed can be somehow be combined to enhance HHG in SSLMs; however, in this paper we focus on the combined effect of a uniform bias and Nanomaterials 2021, 11, 1287 2 of 8 current-voltage asymmetry on the Bloch oscillations modulation, which has successfully predicted giant voltage control of HHG in unbiased SSLMs [28,[38][39][40][41][42].…”
Section: Introductionmentioning
confidence: 99%