TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Moon, Jeong Hyun; Kang, In Ho; Kim, Hyung Woo; Seok, Ogyun; Bahng, Wook; Ha, Min−Woo

doi:10.1016/j.cap.2020.09.003

Cited by 10 publications

(2 citation statements)

References 21 publications

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“…Kosugi et al reported that when annealing in a wet atmosphere, a device's mobility increased to 40 cm 2 /Vs [17]. Using ethyl silicate (TEOS) as a precursor to deposit SiO 2 as a dielectric film, or when depositing a SiO 2 film through the low-temperature chemical vapor deposition process, the interface state density of the low-temperature chemical vapor deposition process was poorer than that of the thermal oxidation process, and the low-temperature process caused a negative flatband voltage [18][19][20]. When silicon oxide and high-dielectric constant films are grown using the atomic layer deposition (ALD) process, as has been widely studied [21][22][23], they can enhance the breakdown electric field.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Luo

2023

Nanomaterials

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Detailed investigations of the pre-oxidation phosphorus implantation process are required to increase the oxidation rate in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. This study focuses on the SiO2/SiC interface characteristics of pre-oxidation using phosphorus implantation methods. The inversion channel mobility of a metal-oxide-semiconductor field effect transistor (MOSFET) was decreased via a high interface state density and the coulomb-scattering mechanisms of the carriers. High-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) were used to evaluate the SiO2/SiC interface’s morphology. According to the energy-dispersive X-ray spectrometry (EDS) results, it was found that phosphorus implantation reduced the accumulation of carbon at the SiO2/SiC interface. Moreover, phosphorus distributed on the SiO2/SiC interface exhibited a Gaussian profile, and the nitrogen concentration at the SiO2/SiC interface may be correlated with the content of phosphorus. This research presents a new approach for increasing the oxidation rate of SiC and reducing the interface state density.

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Section: Introductionmentioning

confidence: 99%

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Luo

2023

Nanomaterials

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“…Also, the deposition rate is high (~15 nm min -1 ) compared to the previous methods and does not show any thickness dependencies. Main drawback of TEOS oxides is that they suffer from increased gate leakage, which is likely due to the presence of structural defects and trapped charges originating from dangling bonds predominantly at the interface [3,11].…”

Section: Introductionmentioning

confidence: 99%

D5.3 - Electrical Characterization of the SiO2/4H-SiC Interface

Nanjappan,

Pfusterschmied,

Schmid

2023

Lectures

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The interface trap density Dit is an important parameter to characterize the quality of the oxide/semiconductor interface. The low channel mobility (20 cm 2 /Vs for dry thermal oxidation) in silicon carbide-based MOS devices is mostly attributed to the high amount of interface traps. To attain high mobilities (>80 cm 2 /Vs), it is required to reduce the Dit to the range of 10 10 cm -2 eV -1 or below. Post oxidation annealing under nitrogen-based gaseous environment is known to reduce Dit, but still there is the requirement to reduce the Dit to reach those values of standard silicon/silicon-dioxide interfaces (10 10 -10 11 cm -2 eV -1 ). Oxides on SiC formed by plasma oxidation process instead of dry oxidation represents a promising technology, as it is known for exhibiting lower Dit values in the range of 10 10 -10 11 cm -2 eV -1 . However, the physics behind the plasma oxidation of 4H-SiC is not yet completely understood. In this work, we report first results about the enhanced oxidation rate and improved electrical characteristics when an oxygen plasma pre-treatment is implemented before the standard dry oxidation of 4H-SiC.

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Numerical modeling of gas‐phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

Chang

Dai

Kong

et al. 2023

Plasma Processes & Polymers

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A chemical kinetic model is developed to study the decomposition of tetraethoxysilane (TEOS) in O2/Ar atmospheric pressure dielectric barrier discharge and compared with gas chromatography and optical emission spectroscopy results. The calculations indicate that the excited Ar dominates the fragmentation of TEOS in the absence of oxygen and mainly breaks the carbon–carbon bonds in TEOS. However, in the presence of oxygen, the primary decomposition process of TEOS is the substitution of ethoxy (–OC2H5) by hydroxyl (–OH). The variation of these two reactions with oxygen composition could explain the transition of the deposition layer from organic to norganic. The model and its results provide a theoretical basis for further modeling and regulating the quality of the deposition layer.

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TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Cited by 10 publications

References 21 publications

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

D5.3 - Electrical Characterization of the SiO2/4H-SiC Interface

Numerical modeling of gas‐phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

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