D5.3 - Electrical Characterization of the SiO2/4H-SiC Interface
C. Nanjappan,
G. Pfusterschmied,
U. Schmid
Abstract:The interface trap density Dit is an important parameter to characterize the quality of the oxide/semiconductor interface. The low channel mobility (20 cm 2 /Vs for dry thermal oxidation) in silicon carbide-based MOS devices is mostly attributed to the high amount of interface traps. To attain high mobilities (>80 cm 2 /Vs), it is required to reduce the Dit to the range of 10 10 cm -2 eV -1 or below. Post oxidation annealing under nitrogen-based gaseous environment is known to reduce Dit, but still there is th… Show more
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