Tensile strained island growth at step-edges on GaAs(110)

Simmonds, Paul J.; Lee, Minjoo Larry

doi:10.1063/1.3498676

Cited by 19 publications

(14 citation statements)

References 25 publications

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“…27 This principle has enabled us to demonstrate high-quality tensile GaAs/InAlAs and GaP/GaAs nanostructures on both (110) and (111) surfaces. 9,21,[28][29][30] Since tensile strain can strongly reduce semiconductor bandgaps, 9,30 tensile QDs on these surfaces are promising for optoelectronic devices operating at long wavelengths. Moreover, tensile GaAs/InAlAs QDs grown on (111) surfaces are perfectly suited to entangled photon generation due to their high electronic symmetry.…”

Section: Tensile Quantum Dotsmentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Section: Tensile Quantum Dotsmentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…6,[28][29][30] We then deposited GaP onto the smooth GaAs(110) buffers to test our hypothesis that dislocation-free self-assembly would occur. 21 Due to its smaller lattice constant, GaP on GaAs experiences 3.7% tensile strain. We found that this tensile-strain causes the GaP to self-assemble into QDs ( Fig.…”

Section: Gap Qds On Gaas(110)mentioning

confidence: 99%

“…To this end, we have pioneered a new, single-step approach based on molecular beam epitaxy (MBE) that enables the selfassembly of dislocation-free, tensile-strained QDs on (111) and (110) surfaces. 5,[21][22][23][24][25] The success of this approach comes from recognizing that combining tensile strain and a (111) or (110) surface restores the energy barrier to dislocation nucleation and glide. On both the (111) and (110) surfaces, the tensile strain-induced shear stresses align with the respective {111} glide planes to effectively reproduce the situation for compressive strain on a (100) surface.…”

Section: Introductionmentioning

confidence: 99%

Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly

Simmonds

2018

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV

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The self-assembly of epitaxial quantum dots on (001) surfaces, driven by compressive strain, is a widely used tool in semiconductor optoelectronics. In contrast, the growth of quantum dots on (111) and (110) surfaces has historically been a significant challenge. In most cases the strain relaxes rapidly via dislocation nucleation and glide before quantum dots can form. In this paper, we discuss a method for the reliable and controllable self-assembly of quantum dots on both (111) and (110) surfaces, where tensile strain is now the driving force. By showing that tensile-strained self-assembly is applicable to several material systems, we demonstrate the versatility of this technique. We believe that tensile-strained self-assembly represents a powerful tool for heterogeneous materials integration, and nanomaterial development, with future promise for band engineering and quantum optics applications.

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“…[24][25][26][27][28] Studies on (In,Ga)(As,P) heteroepitaxial strained films (thick layers and QWs) evidence the presence of composition modulations depending on the strain state (tensile vs. compressive) of the layer. In this material system, stronger composition fluctuations were observed for tensile strained layers, compared with compressively strained ones.…”

mentioning

confidence: 98%

Strain-induced composition limitation in nitrogen δ-doped (In,Ga)As/GaAs quantum wells

Gargallo-Caballero

Luna

Ishikawa

et al. 2012

Applied Physics Letters

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Articles you may be interested inMolecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wells J. Vac. Sci. Technol. B 30, 02B117 (2012); 10.1116/1.3678204 Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition Appl. Phys. Lett. 95, 051102 (2009); 10.1063/1.3193663 Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells

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Tensile strained island growth at step-edges on GaAs(110)

Abstract: Selective epitaxial growth of GaAs on Si with strained short-period superlattices by molecular beam epitaxy under atomic hydrogen irradiation

Cited by 19 publications

References 25 publications

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly

Strain-induced composition limitation in nitrogen δ-doped (In,Ga)As/GaAs quantum wells

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