Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device

Tsuchiya, Toshiyuki; Hemmi, Tetsuya; Suzuki, Junya; Hirai, Yoshikazu; Tabata, Osamu

doi:10.1016/j.prostr.2016.06.178

Cited by 10 publications

(12 citation statements)

References 5 publications

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“…We also tried to fabricate 100 nm wide and thick SiNWs using a 100 nm wide mask pattern and dry etching [23]. However, the thickness control was difficult and the side surfaces were rough, which meant that the tensile strength was low.…”

Section: Sinw Fabricationmentioning

confidence: 99%

Tensile Strength of Silicon Nanowires Batch-Fabricated into Electrostatic MEMS Testing Device

et al. 2018

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Featured Application: Piezoresistive sensors, Torsional mirrors. Abstract:The tensile strength of a silicon nanowire (SiNW) that had been integrated into a silicon-on-insulator (SOI)-based microelectromechanical system (MEMS) device was measured using electrostatic actuation and sensing. SiNWs of about 150 nm diameter and 5 µm length were batch-fabricated into a 5-µm-thick SOI device layer. Since there was no interface between the SiNW and the MEMS device and the alignment was perfect, the SiNW integration into an SOI-MEMS was expected to be useful for developing highly sensitive biochemical sensors or highly reliable torsional mirror devices. The SiNW was tensile tested using the electrostatic MEMS testing device. The integration was achieved using a combination of anisotropic and an isotropic dry etching of silicon, with an inductively coupled plasma reactive ion etching. A fabricated silicon beam of 800 nm square was thinned by a sacrificial oxidation process. The tensile strength of the wire was 2.6-4.1 GPa, which was comparable to that of microscale silicon MEMS structures. The reliability of such a thin device was successfully verified for future applications of the device structures.

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Section: Sinw Fabricationmentioning

confidence: 99%

Tensile Strength of Silicon Nanowires Batch-Fabricated into Electrostatic MEMS Testing Device

et al. 2018

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“…Originally developed for the fabrication of free-standing Si micromechanical structures within bulk Si substrates, [29][30][31][32][33][34][35] the technique was recently extended into the nanoscale. [36][37][38][39][40] Using a two-stage etching technique, NWs are obtained at the upper surface of the device layer, i.e., coplanar with the MEMS surface.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

“…Si NWs with a critical dimension (CD) of 20 nm could be obtained after a 10 μm-deep etch step, thereby bridging a three-order-of-magnitude scale gap. [39,43] An array of such Si NWs fabricated within bulk Si is depicted in Figure 2a, where all features were monolithically machined from the same Si [36][37][38][39][40]47] Column (ii): Si NW fabrication in thin SOI with MEMS fabricated subsequently within a thick polySi layer. [18] Fabrication steps: a) patterning of etch mask by nanolithography, b) shallow Si etch to define NW partially in (i) and fully in (ii), c) passivation for protection against further Si etch, d) polySi growth in (ii) to fabricate MEMS device layer, e) deep Si etch for MEMS fabrication, and f ) release through BOX etching.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

et al. 2023

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The miniaturization of microelectromechanical systems (MEMS) physical sensors is driven by global connectivity needs and is closely linked to emerging digital technologies and the Internet of Things. Strong technical advantages of miniaturization such as improved sensitivity, functionality, and power consumption are accompanied by significant economic benefits due to semiconductor manufacturing. Hence, the trend to produce smaller sensors and their driving force resemble very much those of the miniaturization of integrated circuits (ICs) as described by Moore's law. In this respect, with its IC‐, and MEMS‐compatibility, and scalability, the silicon nanowire is frequently employed in frontier research as the sensor building block replacing conventional sensors. The integration of the silicon nanowire with MEMS has thus generated a multiscale hybrid architecture, where the silicon nanowire serves as the piezoresistive transducer and MEMS provide an interface with external forces, such as inertial or magnetic. This approach has been reported for almost all physical sensor types over the last decade. These sensors are reviewed here with detailed classification. In each case, associated technological challenges and comparisons with conventional counterparts are provided. Future directions and opportunities are highlighted.

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“…T. Kizuka và cộng sự 14 đã sử dụng kính hiển vi lực nguyên tử (AFM) để xác định mô đun đàn hồi E với [100] Si NWs có đường kính nhỏ hơn 10 nm, E = 18 ± 2 GPa. Với [111] Si NWs có đường kính từ 100 đến 200 nm, E = 124.5 GPa, xấp xỉ với mô đun đàn hồi của vật liệu Si khối 15 . Trong một nghiên cứu bằng thực nghiệm khác 16 , thiết bị kiểm tra tĩnh điện được sử dụng để kéo sợi Si NWs có kích thước tiết diện là 190 nm 2 , kết quả thu được chỉ ra độ bền kéo của Si NWs bằng 2.6 GPa.…”

Section: Giới Thiệuunclassified

Investigate the mechanical properties of Si/Ge (Ge/Si) core-shell nanowires: A molecular dynamics study

Thanh¹,

Hung²,

Huy³

et al. 2020

Sci. Tech. Dev. J.- Eng. Tech.

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Nanowires (NWs) have been used increasingly in practice due to their outstanding mechanical, physical, and chemical properties. In this paper, we use the molecular dynamics (MD) method to investigate the mechanical properties of NWs (Si/Ge, Ge/Si) with a core-shell structure under the axial tensile strain along the <100>/{100} direction. Our results show that the strength and elastic modulus of Ge/Si and Si/Ge NWs depend on the composition and size of the core/shell crosssection. The strength and strain of Ge/Si NW decrease with increasing the size of the core crosssection because of the lattice mismatch between two layers of core/shell materials. The elastic modulus of Ge/Si NWs increases with the increasing the size of the core cross-section, while the elastic modulus of the Si/Ge NW decreases. In addition, the theoretical strength and elastic modulus of Ge/Si NWs reduce with the growth of the temperature. Furthermore, we also investigate the effect of strain rate on the mechanical properties of the Ge/Si NWs. The obtained results of the study provide the intrinsic properties of the core-shell NWs and also help in the design and fabrication of electronic and optical devices based on the Ge/Si NWs.

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Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device

Cited by 10 publications

References 5 publications

Tensile Strength of Silicon Nanowires Batch-Fabricated into Electrostatic MEMS Testing Device

Tensile Strength of Silicon Nanowires Batch-Fabricated into Electrostatic MEMS Testing Device

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

Investigate the mechanical properties of Si/Ge (Ge/Si) core-shell nanowires: A molecular dynamics study

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