Ten years of QWIP development at Fraunhofer IAF

Schneider, Harald; Koidl, P.; Walther, M.; Fleißner, J.; Rehm, Robert; Diwo, E.; Schwarz, K. W.; Weimann, G.

doi:10.1016/s1350-4495(01)00086-x

Cited by 43 publications

(33 citation statements)

References 22 publications

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“…Charge injection efficiency becomes worst at very low background flux, but limited by dark current for QWIP detector, i.e., the dark current keeps the pixel on. This initial array gave excellent images with 99.98% of the pixels working (number of dead pixels % 1000), again demonstrating the high yield of GaAs technology [11][12][13][14][15][16][17].…”

Section: Lwir Qwip Focal Plane Arraymentioning

confidence: 99%

Development of mid-wavelength and long-wavelength megapixel portable QWIP imaging cameras

Gunapala

Bandara

Liu

et al. 2005

Infrared Physics & Technology

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Section: Lwir Qwip Focal Plane Arraymentioning

confidence: 99%

Development of mid-wavelength and long-wavelength megapixel portable QWIP imaging cameras

Gunapala

Bandara

Liu

et al. 2005

Infrared Physics & Technology

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“…The above deduction was confirmed experimentally by a research group at Fraunhofer IAF. Based on the photovoltaic low--noise four-zone QWIP structure, the Fraunhofer group [27,28] has manufactured a 256 × 256 FPA camera operating at 77 K with the 9 µm cut-off wavelength. The camera exhibits record-low NEDT values of 7.4 mK with 20 ms integration time and 5.2 mK with 40 ms.…”

Section: Qwipsmentioning

confidence: 99%

Infrared Detectors for the Future

Rogalski

2009

Acta Phys. Pol. A

124

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In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, VO x microbolometer arrays are clearly the most used technology. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in microelectromechanical systems have led to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

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“…QWIP devices achieve, due to excellent homogeneity and low photoelectrical gain, an even better NEDT, however, the integration time must be 10 to 100 times longer for that, and typically it is 5-20 ms [24]. Decision of the best technology is therefore driven by the specific needs of a system.…”

Section: Third Generation Infrared Systemsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Ten years of QWIP development at Fraunhofer IAF

Cited by 43 publications

References 22 publications

Development of mid-wavelength and long-wavelength megapixel portable QWIP imaging cameras

Development of mid-wavelength and long-wavelength megapixel portable QWIP imaging cameras

Infrared Detectors for the Future

New material systems for third generation infrared photodetectors

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