Ten-Micrometer-Thick Si Wafers with Ag Nanoclusters: Substrate Effects on Plasmon-Enhanced Optical Absorption

Kim, Su-Jung; Cho, Yunae; Sohn, Ahrum; Kim, Dong Wook

doi:10.1007/s11468-016-0278-2

Cited by 1 publication

(1 citation statement)

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“…However, both limited thickness of the thin film and poor absorption efficiency of Si in the near-infrared and infrared regions have made Si thin film solar cells less efficient in the use of sunlight. It has been proved that the embedded plasmonic nanoparticles can enhance the light absorption cross-section of Si and eventually could improve the photovoltaic conversion efficiency of Si thin film solar cells [3][4][5][6] . In this work, in order to investigate the near-field enhancement effect on the absorption performance of Si, Si thin films with embedded β-Sn or Ag/β-Sn nanoparticles have been modeled and the corresponding localized electric field distribution and absorption cross-section have been simulated by using a finite element method.…”

Section: Introductionmentioning

confidence: 99%

Near-field enhanced optoelectronic performance of Si thin film

Wang,

Li,

et al. 2023

Plasmonics VII

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Si thin film is one of the promising candidates in the fields of optoelectronics and photovoltaics. However, its applications have been limited due to its poor optical absorption arising from the limited physical thickness. It has been demonstrated that such situation can be improved by taking advantage of plasmonic materials, which could enhance the optical absorption cross-section of Si through the near-field enhancement effect without increasing its physical thickness. However, embedding configuration is necessary in this case, which makes Ag and/or Au nanostructures are not suitable since they could induce some electrical defects. In this work, β-Sn-nanoparticles, which belong to IV group, have been employed to embed in the Si thin film to obtain composite thin film with better optoelectronic performance than pure Si thin film with same thickness. Both optical characterizations and finite element simulations indicate that such improvement could be attributed to the confined near-field induced by the embedded β-Sn-nanoparticles. This work could pave a way for the development of Si-based optoelectronic and/or photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%