Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction

Sun, Yan-Ting; Messmer, E. Rodriguez; Söderström, D.; Jahan, D.; Lourdudoss, Sebastian

doi:10.1016/s0022-0248(01)00970-8

Cited by 21 publications

(9 citation statements)

References 5 publications

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“…4. The lateral overgrowth length, as expected, has strong dependence on opening orientation, with minima occurring at the major low-index directions: [0 0 1], [0 1 1] and ½0 1 % 1: This growth habit agrees well with that reported for selective growth of thick InP through wide openings by HVPE [10]. From Fig.…”

Section: Lateral Overgrowthsupporting

confidence: 88%

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

Dong

Okuno

Mishra

2004

Journal of Crystal Growth

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Section: Lateral Overgrowthsupporting

confidence: 88%

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

Dong

Okuno

Mishra

2004

Journal of Crystal Growth

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“…29 Though in the present investigation InP is grown on InP rather than on Si, the InP grown from openings form forming island-like layers on top of the mask, so that {111} facets may form during lateral growth prior to coalescence. Previous investigations have shown that ELOG layers from openings at angles 15 44 These planes consist of multiple "stairs" of {111} planes on which SFs consequently could form.…”

Section: Deposition Errorsmentioning

confidence: 99%

Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Junesand¹,

Gau²,

Sun³

et al. 2014

Mat Express

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Epitaxial lateral overgrowth of InP has been grown by hydride vapor phase epitaxy on Si substrates with a thin seed layer of InP masked with SiO 2 . Openings in the form of multiple parallel lines as well as mesh patterns from which growth occurred were etched in the SiO 2 mask and the effect of different growth conditions in terms of V/III ratio and growth temperature on defects such as threading dislocations and stacking faults in the grown layers was investigated. The samples were characterized by cathodoluminescence and by transmission electron microscopy. The results show that the cause for threading dislocations present in the overgrown layers is the formation of new dislocations, attributed to coalescence of merging growth fronts, possibly accompanied by the propagation of pre-existing dislocations through the mask openings. Stacking faults were also pre-existing in the seed layer and propagated to some extent, but the most important reason for stacking faults in the overgrown layers was concluded to be formation of new faults early during growth. The formation mechanism could not be unambiguously determined, but of several mechanisms considered, incorrect deposition due to distorted bonds along overgrowth island edges was found to be in best agreement with observations.

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“…The ELOG from the single openings is bounded by the facet planes on two sides and no clear (100) surface is well defined except the growth in the 1000 nm wide opening. These facet planes could be {331}A planes as we discussed in our previous work, 14 and low sulfur concentration is expected on these planes. For the parallel openings aligned at 60 off [011], the vertical growth front of (100) plane with high sulfur concentration emerged after the ELOG layers from the adjacent openings coalesced.…”

Section: A Morphology and Pcl Characterizationmentioning

confidence: 59%

“…In addition to its effect of PCL intensity quenching, the stacking fault intersecting the facet plane will alter the growth profile of ELOG by forming (111)B plane, which in turn reduces the growth rate. As we reported before, 14 the boundary planes observed in ELOG InP from the openings aligned at an angle off [011] on the InP substrate are the high index planes, such as {221}, {331}, and {311}. These planes have a high-density of steps at the growth front over the mask, which will result in high lateral growth rates.…”

Section: B Xtem Characterizationmentioning

confidence: 73%

Optical and structural properties of sulfur-doped ELOG InP on Si

Sun

Junesand

Metaferia

et al. 2015

Journal of Applied Physics

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Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO2 mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

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Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction

Cited by 21 publications

References 5 publications

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Optical and structural properties of sulfur-doped ELOG InP on Si

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