Temporal Spin Splitter Based on an Antiparallel Double δ-Magnetic-Barrier Nanostructure

Zhang, Guilian; Lu, Mao‐Wang; Chen, Sai‐Yan; Peng, Fang-Fang; Meng, Jing-Song

doi:10.1109/tmag.2021.3069352

Cited by 5 publications

(2 citation statements)

References 30 publications

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“…Finally, expanding on our current findings, further exploration of spin-orbit interactions within two-level and multi-level quantum systems represents a promising avenue for future research. Building upon our work with spin-orbit coupling [25], and complemented by recent dynamical studies including spin-orbit coupling [26][27][28][29][30], we aim to significantly enhance our understanding of quantum transport phenomena. This research could pave the way for advanced developments in spintronic devices by integrating established and emerging theories in the field.…”

Section: Discussionmentioning

confidence: 99%

Multilevel dynamics of matter waves scattering in finite potential wells

Mandujano,

Villavicencio,

Romo

2024

Phys. Scr.

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We explore the dynamics of matter wave scattering in finite potential wells using analytical solutions of the Schr"odinger equation within the framework of a quantum shutter model. We find that the incident wave interferes with the bound states of the quantum well, resulting in time-domain oscillations. These oscillations exhibit Rabi-type frequencies, characterised by the energy differences between the incident wave and the bound states of the quantum well. We show that in systems with double-bound states, the interference pattern is characterised by quantum beats in the time-dependent probability density. The period of these beatings depends on the energy difference between the bound states, which can be tuned by controlling the potential parameters. In the general case where bound, anti-bound, and resonant states coexist in the system spectrum, complex oscillations in the probability density arise from the interactions of the incident wave with different quantum states. We demonstrate that the bound states sector can effectively describe this complex behaviour, providing a simple and reliable analytical expression for the probability density in multilevel systems. This formula highlights the significant role of bound states, whose interaction with the incident wave dominates the transient probability density. This contrasts with conventional systems with potential barriers and wells, where resonances govern the wave dynamics.

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Section: Discussionmentioning

confidence: 99%

Multilevel dynamics of matter waves scattering in finite potential wells

Mandujano,

Villavicencio,

Romo

2024

Phys. Scr.

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“…the group delay is equal to the dwell time plus a self-interference delay, referred to as the HGW relationship [15]. Thus, the dwell time for an electron through a semiconductor device can be evaluated by subtracting the self-interference delay from the group delay [16], where the group delay and the self-interference delay can be obtained by the energy derivative of the transmission phase shift and the superposition of incident and reflected waves, separately.…”

Section: Introductionmentioning

confidence: 99%

A numerical method to calculate dwell time for electron in semiconductor nanostructure

Xie¹,

Lu²,

Chen³

et al. 2022

Commun. Theor. Phys.

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To some extent, the operational quickness of semiconductor devices depends on the transmission time of electron through semiconductor nanostructures. However, the calculation of transmission time is very difficult, thanks to both contentious definition of the time in quantum mechanics and complicated effective potential functions experienced by electron in semiconductor devices. Here, based on improved transfer matrix method to numerically solve Schrödinger equation and H.G. Winful’s (HGW) relationship to calculate the dwell time, we develop a numerical approach to evaluate the transmission time of electron in semiconductor devices. Compared to exactly resolvable case of rectangular potential barrier, the established numerical approach possesses high precision and small error, which may be employed to explore dynamic response and operating speed of semiconductor devices. This proposed numerical method is successfully applied to the calculation of dwell time for electron in double rectangular potential barriers and the dependence of transmission time on the number of potential barriers is revealed.

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