TEMPO: a New Insertion Device Beamline at SOLEIL for Time Resolved Photoelectron Spectroscopy Experiments on Solids and Interfaces

Polack, F.; Silly, Mathieu G.; Chauvet, C.; Lagarde, Bruno; Bergeard, Nicolas; Izquierdo, M.; Chubar, Oleg; Krizmancic, Damjan; Ribbens, M.; Duval, Jean-Pierre; Basset, Christian; Kubsky, S.; Sirotti, Fausto

doi:10.1063/1.3463169

Cited by 94 publications

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“…XPS experiments were carried out on the TEMPO beamline [50] (SOLEIL French synchrotron facility) at room temperature. The photon source was a HU80 Apple II undulator set to deliver linearly polarized light.…”

Section: Methodsmentioning

confidence: 99%

Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals p-n junction

Aziza

Henck

Felice

et al. 2016

Carbon

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a b s t r a c tAtomically thin MoS 2 /graphene vertical heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. In this work, we studied the optical and electronic properties of n doped single layer MoS 2 on p doped bilayer graphene vdW heterostructures. We demonstrate a non-uniform strain between two different orientation angles of MoS 2 monolayer on top of epitaxial bilayer graphene. A significant downshift of the E 1 2g mode, a slight downshift of the A 1g mode, and photoluminescence shift and quenching are observed between two MoS 2 monolayers differently oriented with respect to graphene; This could be mostly attributed to the strain-induced transition from direct to indirect bandgap in monolayer MoS 2 . Moreover, our theoretical calculations about differently-strained MoS 2 monolayers are in a perfect accordance with the experimentally observed behavior of differently-oriented MoS 2 flakes on epitaxial bilayer graphene. Hence, our results show that straininduced bandgap engineering of single layered MoS 2 is dependent on the orientation angle between stacked layers. These findings could be an interesting novel way to take advantage of the possibilities of MoS 2 and deeply exploit the capabilities of MoS 2 /graphene van der Waals heterostructures.© 2016 Elsevier Ltd. All rights reserved.Ever since the technique to isolate stable single-layer graphene was reported, the study of two-dimensional (2D) materials has gained a lot of research interest. Hence, a broad family of 2D materials like graphene, transition metal dichalcogenides (TMDCs), and topological insulators have been explored so far [1]. For the sake of exploring their fundamental interfacial interactions and conceiving novel electronic functionalities, vertical heterostructures composed of 2D materials stacked together by van der Waals (vdW) forces have attracted a great attention lately [2]. Among these combined structures, the MoS 2 /graphene heterostructure, among other heterostructures combining graphene with different layered 2D materials [3], shows a promising potential for next generation nanoelectronic and optoelectronic devices thanks to the outstanding carrier mobilities on one hand and the excellent optical responsivities on the other hand [4e6].However, research work about the structural quality, the band alignment and the optical emission properties of MoS 2 /graphene or graphene/MoS 2 vdW heterostructures are still limited. The exploration of such characteristic properties are fundamental to make possible the assembling of MoS 2 with graphene, pave the way for the realization of a well-ordered MoS 2 /graphene structure, and enable opportunities for a wide spectrum of optoelectronic functionalities. Inspirations of this present work arise from the fact that some of the theoretical calculations have predicted the crossover between a direct and indirect bandgap of MoS 2 originating from the modification of interlayer orientation [7e9]. Since the properties of MoS 2 /graphene heterostructure depend st...

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Section: Methodsmentioning

confidence: 99%

Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals p-n junction

Aziza

Henck

Felice

et al. 2016

Carbon

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“…The device was then introduced in an ultrahigh vacuum (10 −8 Pa) in the XPS setup of the TEMPO beamline at the SOLEIL synchrotron radiation source. 18 The 100 × 100 μm 2 beam could be directed onto a single top electrode located by a map of the whole sample using the Pt absorption edge [see Fig. 1(b)].…”

Section: Methodsmentioning

confidence: 99%

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

et al. 2013

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The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO 3 /Nb-doped SrTiO 3 , under in-situ bias voltage is investigated using xray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

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“…A second group of experiments was done at the SOLEIL storage ring at Saclay, Paris, using the TEMPO (Ref. 18) undulator beamline also in single bunch mode, with a light packet separation of 1184 ns. The two sets of apparatus have both been described before.…”

Section: Methodsmentioning

confidence: 99%

Triple ionization of CO2 by valence and inner shell photoionization

Eland

Andrić

Linusson

et al. 2011

The Journal of Chemical Physics

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Triple ionization of CO(2) by valence and inner shell photoionization. Physics, 135(13) Spectra of triply ionized CO 2 have been obtained from photoionization of the molecule using soft x-ray synchrotron light and an efficient multi-electron coincidence technique. Although all states of the CO +++ 2 trication are unstable, the ionization energy for formation of molecular ions at a geometry similar to that of the neutral molecule is determined as 74 ± 0.5 eV. Journal of Chemical

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TEMPO: a New Insertion Device Beamline at SOLEIL for Time Resolved Photoelectron Spectroscopy Experiments on Solids and Interfaces

Cited by 94 publications

References 0 publications

Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals p-n junction

Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals p-n junction

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

Triple ionization of CO2 by valence and inner shell photoionization

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