Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

Rault, Julien; Agnus, Guillaume; Maroutian, Thomas; Pillard, V.; Lecoeur, Ph.; Niu, Gang; Vilquin, Bertrand; Bendounan, Azzedine; Sirotti, Fausto; Barrett, N.

doi:10.1103/physrevb.87.155146

Cited by 42 publications

(35 citation statements)

References 43 publications

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“…For the switching pulse P − to P + , the Pt/BTO/NSTO stack resistance R, is higher, consistent with the lower current through the capacitor measured in Ref. 17. The high to low current behavior when switching from P − to P + is due to the increase of the electron barrier height at the bottom interface (BTO/NSTO) of the capacitor (see Figure 7 of Ref.…”

Section: B Simulationssupporting

confidence: 84%

“…The growth conditions and heterostructure properties are described in Ref. 17. 300 × 300 µm 2 thick Pt electrodes were patterned by ionic beam etching.…”

Section: Methodsmentioning

confidence: 99%

“…The high to low current behavior when switching from P − to P + is due to the increase of the electron barrier height at the bottom interface (BTO/NSTO) of the capacitor (see Figure 7 of Ref. 17 for the polarization-dependent band lineups of the Pt/BTO/NSTO heterostructure).…”

Section: B Simulationsmentioning

confidence: 99%

“…The static properties of the ferroelectric capacitance have been studied by photoemission in Ref. 17. Bias pulses on a Pt/BTO/NSTO capacitor probe the time-resolved chemical and electronic structure of the Pt/BTO interface.…”

Section: Introductionmentioning

confidence: 99%

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Time-resolved photoemission spectroscopy on a metal/ferroelectric heterostructure

et al. 2013

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In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.

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Section: B Simulationssupporting

confidence: 84%

“…The growth conditions and heterostructure properties are described in Ref. 17. 300 × 300 µm 2 thick Pt electrodes were patterned by ionic beam etching.…”

Section: Methodsmentioning

confidence: 99%

Section: B Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Time-resolved photoemission spectroscopy on a metal/ferroelectric heterostructure

et al. 2013

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“…Recent papers have shown that interface properties highly depend on the lattice matching 65 or interface chemistry. 66 At Mg/MgH 2 interfaces, the Mg-H bonding is the most important bonding that leads to interface stability.…”

Section: The Search Of Relative Position Of Two Phasesmentioning

confidence: 99%

Modeling and stabilities of Mg/MgH2 interfaces: A first-principles investigation

et al. 2014

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We have theoretically investigated the modeling and the structural stabilities of various Mg/MgH2 interfaces, i.e. Mg($10\bar 10$101¯0)/MgH2(210), Mg(0001)/MgH2(101) and Mg($10\bar 10$101¯0)/MgH2(101), and provided illuminating insights into Mg/MgH2 interface. Specifically, the main factors, which impact the interfacial energies, are fully considered, including surface energies of two phases, mutual lattice constants of interface model, and relative position of two phases. The surface energies of Mg and MgH2, on the one hand, are found to be greatly impacting the interfacial energies, reflected by the lowest interfacial energy of Mg(0001)/MgH2(101) which is comprised of two lowest energy surfaces. On the other hand, it is demonstrated that the mutual lattice constants and the relative position of two phases lead to variations of interfacial energies, thus influencing the interface stabilities dramatically. Moreover, the Mg-H bonding at interface is found to be the determinant of Mg/MgH2 interface stability. Lastly, interfacial and strain effects on defect formations are also studied, both of which are highly facilitating the defect formations. Our results provide a detailed insight into Mg/MgH2 interface structures and the corresponding stabilities.

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A Solar Transistor and Photoferroelectric Memory

Pérez‐Tomás

Lima

Billon

et al. 2018

Adv Funct Materials

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Transistors switch a semiconductor conductive state (or on-state) and an insulator state (or off-state) by means of a third additional terminal known as gate [1]- [3]. An external bias between their two flow electrodes is always required for channel carriers to move, and this bias represents an undesirable yet unavoidable energy consumption. Harvesting the photon energy, a photovoltaic junction would already act as a self-powered current source, but incipient photovoltaic switches do not have a stable low energy consumption state [4]- [10]. Here, we report a new photo-ferroelectric transistor device concept based on a ferroelectric oxide (FEoxide)/organic semiconductor heterojunction, where an insulating FE-oxide (Pb(ZrxTi1-x)O3) acts as a reversibly polarizable electron transport media of the organic bulk heterojunction (P3HT:PCBM) photogenerated carriers. Therefore we demonstrate two terminal (i.e. gate-less), low-cost (metal-oxide solutionprocessed), self-powered and non-volatile phototransistors that switch between bi-stable on and off states and with a low energy consumption in the off state.A phototransistor, photo-switch or photo-FET [11]-[13] can be defined as a three-terminal device whose output can be simultaneously and independently controlled by light or voltage [14]. Ideally, the phototransistor concept should be integrated into a vertical (sandwich-like) two-terminal device for larger density of miniaturization [15] while keeping a normally-off state for better dissipation efficiency and easier control [16]. A reliable, cleanroom-less, low cost two-terminal phototransistor would represent a paradigm shift for the next generation of sustainable embodiments such as photodetectors, smart windows, flexible detector systems and optical memories [17]. Nevertheless, such a device is unconventional and challenging since a photovoltaic semiconductor Schottky or p-n junction does not switch as internal fields and chemical potentials are not bi-stable [16]. There are however several photo-switchable mechanisms that can result in diverse types of photovoltaic responses; these include ferroelectric photovoltaics [4]-[6], light-induced ionic drift in halide perovskites [7], [8], photovoltaic resistive switching [9] and the photochromic effect [10]. Among the photovoltaic mechanisms enabling switching responses, ferroelectric oxides (FE-oxide) possess useful features in their switchable properties (a changeable direction of current and voltage by polarization switching) and in their anomalous photovoltaic effect that can generate photovoltages much bigger than the band-gap [18] [19]. Nevertheless, their inherently low photocurrents (in the range of nA-µA/cm 2 ) have resulted in poor overall photovoltaic efficiency [19]-[20]. A way to improve the photovoltaic current of FEoxide solar cells is through the combination with organic [31]-[34] or inorganic light absorbers [21]-[27].It has been theoretically [28] and experimentally demonstrated [29], [30] that ferroelectrics bend their electronic band structure and offs...

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Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

Cited by 42 publications

References 43 publications

Time-resolved photoemission spectroscopy on a metal/ferroelectric heterostructure

Time-resolved photoemission spectroscopy on a metal/ferroelectric heterostructure

Modeling and stabilities of Mg/MgH2 interfaces: A first-principles investigation

A Solar Transistor and Photoferroelectric Memory

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