Template-assisted electrodeposition of indium–antimony nanowires – Comparison of electrochemical methods

Hnida, Katarzyna E.; Mech, Justyna; Sulka, Grzegorz D.

doi:10.1016/j.apsusc.2013.09.135

Cited by 34 publications

(29 citation statements)

References 29 publications

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“…No other crystalline impurities peaks, such as In2O3, were detected in the XRD pattern. Similar XRD pattern has been reported earlier for electrochemically grown InSb nanowires [35][36][37].…”

Section: Semiconductors -Growth and Characterizationsupporting

confidence: 88%

Understanding the Mechanisms that Affect the Quality of Electrochemically Grown Semiconducting Nanowires

Singh¹

2018

Semiconductors - Growth and Characterization

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Template-assisted synthesis of nanowires is a simple electrochemical technique commonly used in the fabrication of semiconducting nanowires. It is an easy and cost-effective approach compared to conventional lithography, which requires expensive equipment. The focus of this chapter is on the various mechanisms involving mass transport of ions during successive stages of the template-assisted electrochemical growth of indium antimonide (InSb) nanowires. The nanowires were grown in two different templates such as commercially available anodic aluminum oxide (AAO) templates and polycarbonate membranes. The chapter also presents the results of characterizing the InSb nanowires connected in a field effect transistor (FET) configuration. The Sb-rich InSb nanowires that were fabricated by DC electrodeposition in nanoporous AAO exhibited hole-dominated transport (p-type conduction). Temperature-dependent transport measurement shows the semiconducting nature of these nanowires.

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Section: Semiconductors -Growth and Characterizationsupporting

confidence: 88%

Understanding the Mechanisms that Affect the Quality of Electrochemically Grown Semiconducting Nanowires

Singh¹

2018

Semiconductors - Growth and Characterization

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“…[1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme.…”

mentioning

confidence: 99%

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Wang

Song

Zhang

et al. 2017

Adv Elect Materials

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on. [1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme. [9,19] Although hydrothermal methods are seem to be the simple process and capable to produce large amounts of 1D nanomaterials with the relatively low cost, they are challenging to precisely control the diameter, morphology, and crystal structure of the nanomaterials obtained, seriously influencing their chemical and physical properties, eventually limiting their practical utilizations. [13,20] In general, electrospinning is well accepted to its simplicity and versatility to yield organic, inorganic or composite nanofibers (NFs). [21,22] This technique can not only fabricate NFs with well-controlled properties, such as the excellent crystallinity, homogeneous chemical composition, and uniform diameters but also deliver the high throughput Although significant progress has been made towards using ZnO nanofibers (NFs) in future high-performance and low-cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple onestep electrospinning process (i.e., without hot-press) is presented to obtain controllable ZnO NF networks to achieve high-performance, large-scale, and low-operating-power thin-film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 °C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (V th ) of ≈0.9 V, a low leakage current of ≈10 −12 A, and a superior on/off current ratio of ≈10 6 , corresponding to one of the best-performed ZnO NF devices reported to date. When high-κ AlO x thin films are employed as gate dielectrics, the source/drain voltage (V DS ) can be substantially reduced by 10× to a range of only 0-3 V, along with a 10× improvement in mobility to a respectable value of 0.2 cm 2 V −1 s −1 . These results indicate the potential of these nanofibers for use in next-generation low-power devices. Thin-Film Transistors

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“…higher resistivity of semiconducting deposit and its sensitivity to crystal lattice defects. These problems are complicated by the fact that resistivity of the deposit can constantly change during electrodeposition [29]. It should be noted that the electrosynthetic and electroanalytical approaches have played a notable role in the history of thallium chemistry.…”

Section: Electrochemical Depositionmentioning

confidence: 99%

Various Methods for Synthesis of Bulk and Nano Thallium(III) Oxide

Moeinian

Akhbari

2015

J Inorg Organomet Polym

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Thallium(III) oxide, a degenerate n-type semiconductor, is a highly insoluble thermally stable thallium source suitable for glass, optic and ceramic applications. Although thallium oxide is an important metal oxide, its synthesis has only been sporadically studied. This review gives an overview of all reported synthetic routes for the preparation of both bulk and nanostructured thallium(III) oxide. These methods include electrochemical methods, thermal method, chemical vapor deposition (CVD), microwave irradiation, sol-gel method and one recently chemical route using potassium superoxide. In electrochemical methods, both bulk and nanostructures of thallium(III) oxide can be prepared and the amount of the deposited material, thickness of the layer or wires length depends on the deposition time matrix structure. Thermal methods are simple and effective techniques which include thermal decomposition and calcination of various precursors. By CVD and microwave irradiation we be able to synthesis bulk and nanostructures of thallium(III) oxide, respectively. A one-step, room temperature, solution synthesis of thallium(III) oxide nanoparticles with a size of about 10 nm is reported by using potassium superoxide.

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Template-assisted electrodeposition of indium–antimony nanowires – Comparison of electrochemical methods

Cited by 34 publications

References 29 publications

Understanding the Mechanisms that Affect the Quality of Electrochemically Grown Semiconducting Nanowires

Understanding the Mechanisms that Affect the Quality of Electrochemically Grown Semiconducting Nanowires

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Various Methods for Synthesis of Bulk and Nano Thallium(III) Oxide

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