Understanding the Mechanisms that Affect the Quality of Electrochemically Grown Semiconducting Nanowires

Abstract

Template-assisted synthesis of nanowires is a simple electrochemical technique commonly used in the fabrication of semiconducting nanowires. It is an easy and cost-effective approach compared to conventional lithography, which requires expensive equipment. The focus of this chapter is on the various mechanisms involving mass transport of ions during successive stages of the template-assisted electrochemical growth of indium antimonide (InSb) nanowires. The nanowires were grown in two different templates such as commercially available anodic aluminum oxide (AAO) templates and polycarbonate membranes. The chapter also presents the results of characterizing the InSb nanowires connected in a field effect transistor (FET) configuration. The Sb-rich InSb nanowires that were fabricated by DC electrodeposition in nanoporous AAO exhibited hole-dominated transport (p-type conduction). Temperature-dependent transport measurement shows the semiconducting nature of these nanowires.

Tunneling Effects in Crossed Ta2Pt3Se8–Ta2Pd3Se8 Nanowire Junctions: Implications for Anisotropic Photodetectors

“…The I – V characteristics show that both TPtS and TPdS nanowires possess nearly linear output curves at various temperatures (Figure c,d), indicating that nearly ohmic contacts are formed between nanowires and metal electrodes. Furthermore, an increase in the conductance is observed for both nanowires when the temperature rises from 140 to 280 K, owing to their semiconductor nature . As illustrated in Figure e, the I – V characteristics of the TPtS–TPdS junction are subsequently investigated.…”

“…Furthermore, an increase in the conductance is observed for both nanowires when the temperature rises from 140 to 280 K, owing to their semiconductor nature. 46 As illustrated in Figure 1e, the I−V characteristics of the TPtS− TPdS junction are subsequently investigated. Nonlinear behaviors are observed at various temperatures, suggesting that a rectifying barrier is formed at the TPtS−TPdS interface.…”