2014
DOI: 10.1109/lmwc.2013.2293668
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Temperature Sensors to Measure the Central Frequency and 3 dB Bandwidth in mmW Power Amplifiers

Abstract: This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.Index Terms-Built-i… Show more

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Cited by 13 publications
(16 citation statements)
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(27 reference statements)
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“…A differential temperature sensor was implemented in the same IC and placed close to the last stage of the PA in order to monitor its power dissipation. Details of the sensor circuit and the PA + sensor layout can be seen in [2,3,7]. Fig.…”
Section: A Circuit Descriptionmentioning
confidence: 99%
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“…A differential temperature sensor was implemented in the same IC and placed close to the last stage of the PA in order to monitor its power dissipation. Details of the sensor circuit and the PA + sensor layout can be seen in [2,3,7]. Fig.…”
Section: A Circuit Descriptionmentioning
confidence: 99%
“…The sensor predicts a 3 dB bandwidth of 1.65 GHz, while for the power gain curve the bandwidth is 1.6 GHz. According to measurements of the S21 parameter reported in [2], the central frequency is at 58.45 GHz and the bandwidth was 1.8 GHz. Note that a 500 MHz step was used in the measurements.…”
Section: B Homodyne Temperature Measurementsmentioning
confidence: 99%
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