Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

Li, Liuan; Chen, Jia; Gu, Xin; Li, Xiaobo; Pu, Taofei; Ao, Jin‐Ping

doi:10.1016/j.spmi.2018.09.007

Cited by 24 publications

(21 citation statements)

References 18 publications

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“…The low barrier height for 5-nm-thick ZnO would be the main reason for the lower turn-on voltage. 49 Finally, energy-dispersive x-ray spectroscopy (EDS) was carried out for 20-nm-thick ZnO. Figure 10a shows the atomic percent versus depth profile for each element.…”

Section: Pt/zno Interface Could Be One Reason For the High Q/ Bmentioning

confidence: 99%

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Kim

Jung

Choi

et al. 2021

Journal of Elec Materi

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ZnO films (5 nm and 20 nm) have been grown on GaN single-crystal substrates by thermal atomic layer deposition (ALD) and the electrical properties of n-GaN Schottky contacts modified by such ultrathin ZnO films have been characterized. Compared with 5-nm-thick ZnO, 20-nm-thick ZnO exhibited a better rectifying nature. The average barrier height and ideality factor at room temperature were extracted to be 0.64 eV and 2.33 eV, and 1.01 eV and 1.16 eV, for 5-nm-and 20-nm-thick ZnO, respectively. These results indicate that both the barrier height and ideality factor were altered effectively by changing the ZnO thickness. The temperature-dependent reverse currentvoltage (I-V) characteristics revealed that tunneling was dominant for the 5nm-thick ZnO. A laterally inhomogeneous barrier was appropriate to explain the forward I-V characteristics for both samples. Based on the parallel conductance method and forward I-V data, a lower interface state density was observed for 20-nm-thick ZnO, implying improved interface quality. These results suggest that the electrical properties of n-GaN Schottky contacts could be easily modulated by changing the ZnO thickness.

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Section: Pt/zno Interface Could Be One Reason For the High Q/ Bmentioning

confidence: 99%

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Kim

Jung

Choi

et al. 2021

Journal of Elec Materi

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show abstract

“…Furthermore, the thermal stability of Ni and TiN anode SBDs were evaluated by temperature-dependent currentvoltage (I-V ) characteristics. [12] The temperature was adjusted to 25 • C, 75 • C, 25 • C, 125 • C, 25 • C, 175 • C, and 25 • C, consecutively. The turn-on voltage and on-resistance (R on ) deduced from the linear plot remain virtually constant for all the data at 25 • C. However, obvious current fluctuation is observed from the logarithm plot for the Ni anode diode in the threshold voltage region.…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN Shottky barrier diode with thermally stable TiN anode*

Liu¹,

Li²,

Pu³

et al. 2021

Chinese Phys. B

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Vertical GaN Schottky barrier diodes with TiN anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ⋅cm2, respectively. The current-voltage curves show rectifying characteristics under different temperatures from 25 °C to 200 °C, implying a good thermal stability of TiN/GaN contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at TiN/GaN interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.

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“…A higher junction temperature results in large leakage current and degrades the rectification characteristic. Therefore, the design and fabrication of temperature sensor block is necessary for the temperature monitoring [11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

et al. 2021

IEICE Electron. Express

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To realize the in-situ temperature monitoring of power device, three kinds of Schottky barrier diodes (SBDs) are designed to reveal the effect of geometry on the temperature sensitivity. The current-voltage characteristics at different temperature demonstrate that all the circular-, finger-, and 8-finger-SBDs show good rectification. The forward voltage at a specific sub-threshold current level presents good linearity versus temperature. In addition, the deduced sensitivity presents no dependency on the geometry but is determined by the ideality factor and current density. The sensing mechanism of SBD sensor is explained by the thermionic emission model. Those results are beneficial to the design and fabrication of temperature sensor.

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Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

Cited by 24 publications

References 18 publications

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Vertical GaN Shottky barrier diode with thermally stable TiN anode*

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

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