Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning

Mogg, S.; Chiţică, N.; Christiansson, Ulf; Schatz, Richard; Sundgren, P.; Asplund, Carl; Hammar, Mattias

doi:10.1109/jqe.2004.826421

Cited by 54 publications

(20 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast to 850 nm VCSELs, that are designed such that the gain peak and the cavity resonance are nearly aligned at RT long-wavelength VCSELs have a relatively large spectral detuning between the gain peak and the cavity resonance at RT, which results in enhanced threshold temperature sensitivity [5]. Additionally, for large-scale VCSEL arrays, thermal crosstalk via the heat sink can be an important problem.…”

mentioning

confidence: 99%

Dynamical Hysteresis and Thermal Effects in Vertical-Cavity Surface-Emitting Lasers

Torre

Masoller

2010

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Abstract-We study numerically the polarization-resolved light-output characteristic of vertical-cavity surface-emitting lasers (VCSELs) using the spin-flip model for VCSELs extended to take into account thermal effects via a dynamical equation for the active region temperature, including heat dissipation, heating due to nonradiative carrier recombination, and Joule effect. The temperature dynamics is coupled to the carrier and optical field dynamics via a frequency and temperaturedependent gain coefficient. We show that the interplay of thermal effects and injection current variation can result in turn-on and turn-off hysteresis cycles that can be, depending on various model parameters, positive or negative. In the first case, the turn-on occurs at a higher value of the bias current than the turn-off; in a negative hysteresis cycle, the laser turns-on at a lower value of the bias current than the turn-off. These results are interpreted in terms of the interplay of the two time-scales determined by the injection current swept rate and the thermal relaxation rate.

show abstract

mentioning

confidence: 99%

Dynamical Hysteresis and Thermal Effects in Vertical-Cavity Surface-Emitting Lasers

Torre

Masoller

2010

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…The wavelength shift with temperature of a similar cavity has been measured elsewhere [20] and is approximately 0.08 nm/K. Using these figures, the cavity wavelength shift with temperature is calculated to be 12 K/mA.…”

Section: High Powermentioning

confidence: 51%

Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

et al. 2004

View full text Add to dashboard Cite

We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mWrange output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140°C. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 -0.5 mW and 2.3 -0.6 mA, respectively, over a temperature interval of 10 -140°C. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.

show abstract

“…As a result of thermo-optic effect, the temperature-dependent wavelength shifts in vertical cavity surface-emitting lasers (VCSELs) and silicon-based MRs are found to be about 50-100 pm/°C [27], [28]. As a widely used device in ONoCs, MRs perform as a wavelength-selective optical switch or modulator.…”

Section: Related Workmentioning

confidence: 99%

3-D Mesh-Based Optical Network-on-Chip for Multiprocessor System-on-Chip

Huang

et al. 2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

View full text Add to dashboard Cite

Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning

Cited by 54 publications

References 31 publications

Dynamical Hysteresis and Thermal Effects in Vertical-Cavity Surface-Emitting Lasers

Dynamical Hysteresis and Thermal Effects in Vertical-Cavity Surface-Emitting Lasers

Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

3-D Mesh-Based Optical Network-on-Chip for Multiprocessor System-on-Chip

Contact Info

Product

Resources

About