Temperature programmed desorption study of Zr-diethylamido precursor for ZrO2 CVD

Structural, optical, and electrical properties of Cu-doped ZrO 2 films prepared by magnetron co-sputtering

“…The ZrO 2 has monoclinic structure (m-ZrO 2 ) at roomtemperature, and it is transformed into a tetragonal structure (t-ZrO 2 ) in a temperature range from 950 • C to 1170 • C and cubic structure (c-ZrO 2 ) over 1170 • C. [10,11] The structure and properties of ZrO 2 film strongly depend on the deposition technique and growth condition. Many researchers have tried different methods to deposit ZrO 2 films, such as thermal decomposition, [12] electron-beam evaporation, [13] chemical vapor deposition, [14,15] sol-gel method, [16] reactive sputtering, [17,18] etc. Among these methods, sputtering is known as a technique which has many merits suitable for industrial applications, such as easily depositing film in a large area, simple apparatus, low substrate temperature, high deposition rate, good adhesion to the substrate, etc.…”

Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursors

“…We chose Hf(NEt 2 ) 4 as a Hf precursor to minimize carbon and chlorine contaminations in grown films. Since Hf(NEt 2 ) 4 has Hf-N bonds instead of Hf-Cl, it is expected to produce less carbon and chlorine contaminations in grown films [13]. Hf(NEt 2 ) 4 is liquid at room temperature and has moderate vapor pressure, meaning that it is a suitable precursor for depositing Hf-related materials.…”

Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)

“…A detailed description of the UHV system is presented elsewhere. 8 The XPS experiment was carried out in a separate ultrahigh vacuum ͑UHV͒ chamber with a base pressure of less than 2 ϫ 10 −10 Torr. The photoelectron spectra were recorded using a nonmonochromatic 300 W Al/ K ␣ x-ray source and a 100 nm radius hemispherical analyzer ͑model VG Cram2͒.…”