Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)

Abstract

Adsorption and reactions of tetrabutoxysilane (Si(OC4H9)4) on a Si(100) surface were investigated using temperature programmed desorption and x-ray photoelectron spectroscopy. Physisorbed tetrabutoxysilane undergoes C–O bond scission to form –O–Si(OC4H9)3 and butyl species on Si(100) at 200K. It is observed that further C–O bond scission takes place sequentially in the temperature range of 200–500K. Main desorption products are butene and hydrogen, which are desorbed at 410K and 820K, respectively. We propose that the production of butene takes place through β-hydride elimination of the butyl group on Si(100).