Abstract:In this work we studied the possibility of improving InGaAs/InAlAs-on-InP high electron mobility transistor (HEMT) devices by using temperature-graded InAlAs buffer layers with growing temperatures in the range of Tg=250–560 °C. Our specimens were grown by molecular beam epitaxy and we analyzed them using plane view and cross-sectional transmission electron microscopy, atomic force microscopy, scanning electron microscopy and Hall effect measurements. We found that growth at the optimum temperature (Tg=530 °C)… Show more
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