Characterization of Dislocations in Semiconductor Heterostructures Using X-ray Rocking Curve Pendellösung

Althowibi, F. A.; Ayers, J. E.

doi:10.1007/s11664-017-5895-9

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2021

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“…Therefore, the better crystal interface, the more apparent Pendellösung interference fringes. [24,25] The diffraction peak of sample 2 in ω-2θ scanning is more obvious, which also indicates its better crystal quality.…”

Section: Xrd Testmentioning

confidence: 97%

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn*

Cao¹,

Zhao²,

Yang³

et al. 2021

Chinese Phys. B

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We propose a metal organic vapor phase epitaxy (MOVPE) method of pre-introducing TMIn during the growth of u-GaN to improve the subsequent growth of InGaN and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive InGaN growth rate. Further x-ray diffraction (XRD), photoluminescence (PL), and atomic force microscope (AFM) tests showed that the quality of InGaN is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when InGaN is grown, so as to improve the material quality.

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Section: Xrd Testmentioning

confidence: 97%