Temperature effects on electrical performance of carbon‐based nano‐interconnects at chip and package level

Chiariello, Andrea G.; Maffucci, Antonio; Miano, G.

doi:10.1002/jnm.1884

Cited by 10 publications

(7 citation statements)

References 26 publications

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“…Carbon nanotubes present as well interesting thermal properties as interconnect material. Theoretical and experimental analyses have also shown negative thermal coefficient of resistivity (TCR) for MWCNTs [9], [40]. Negative TCRs can be explained from the fact that there are more channels in MWCNTs contributing to conductance at higher temperatures as per Fermi-Dirac distribution.…”

Section: Design Methodsmentioning

confidence: 99%

Present and future prospects of carbon nanotube interconnects for energy efficient integrated circuits

Todri‐Sanial

Magnani

Magistris

et al. 2016

2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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Carbon nanotubes (CNTs) due to their unique mechanical, thermal and electrical properties are being investigated as promising candidate material for on-chip and off-chip interconnects. The attractive mechanical properties of CNTs, including high Youngs modulus, resiliency and low thermal expansion coefficient offer great advantage for reliable and strong interconnects, and even more so for on-chip and off-chip integration. High bandwidth interconnects are required for achieving denser, faster and energy-efficient circuits. Due to their unique properties, CNTs present an opportunity to address the current challenges of copper interconnects and provide solutions for reliable efficient and smart system integration. In this work, we give an overview on the current advancements on CNT interconnects and the future prospects for energy efficient integration

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Section: Design Methodsmentioning

confidence: 99%

Present and future prospects of carbon nanotube interconnects for energy efficient integrated circuits

Todri‐Sanial

Magnani

Magistris

et al. 2016

2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

Self Cite

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“…Let us now consider the case of replacing the copper with a CNTs or GNRs. The electrical resistance of a single CNT or GNR of length l may be put in the form [7], [16]:…”

Section: Temperature-dependent Electrical Resistancesmentioning

confidence: 99%

Carbon-based Power Delivery Networks for nanoscale ICs: electrothermal performance analysis

Magnani

Magistris

Todri‐Sanial

et al. 2015

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

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This paper presents the electrothermal analysis of the performances of a Power Delivery Network for nanoscale integrated circuits, comparing standard (copper) with carbon nanotubes and graphene interconnects. Realistic carbon interconnects are considered, with the typical values of electrical and thermal parameters obtainable with the current fabrication technology. A temperature-dependent model for the electrical resistance is adopted, able to describe the case of negative temperature coefficient of the resistance, as it has been theoretically predicted and experimentally proved. The electrothermal analysis of the power network of a standard chip puts on evidence, for the first time, an interesting trade-off between voltage drop and temperature increase, while exploiting carbon nanotube and graphene based interconnects.

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“…On account of so many advantages, plenty of meaningful explorations about CNT interconnects have been made, including theoretical investigations and experimental analyses . Generally, the equivalent model of the traditional interconnect mainly includes the lumped model and distributed model, which are used for the modeling of the longer and shorter interconnects, respectively.…”

Section: Introductionmentioning

confidence: 99%

Inductive Peaking Technology for Bandwidth Enhancement in Carbon Nanotube Bundle Interconnect

Zhao

Zhang

2018

Physica Status Solidi (a)

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Based on transmission line modeling, this paper proposes an inductive peaking technology to improve the bandwidth of single-walled carbon nanotube interconnect. And the transfer function of the equivalent model is derived to obtain the frequency response of the interconnect according to ABCD parameter matrix approach. Considering the effects of temperature, length, load resistance, and driver size, the 3-dB bandwidth of the interconnect for 14 nm technology node at global level versus the peaking inductance has been obtained. The results show an increase of the peaking inductance can improve the bandwidth effectively. However, the increase is not boundless for higher inductances. The bandwidth will roughly maintain a steady level when the value of the inductance reaches a certain degree. Moreover, overshoot phenomenon will occur and the crosstalk is increased for larger inductance. On the other hand, as the length, temperature, and load resistance increase, 3-dB bandwidth decreases correspondingly. Whereas it increases with the increase of the driver size.

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Temperature effects on electrical performance of carbon‐based nano‐interconnects at chip and package level

Cited by 10 publications

References 26 publications

Present and future prospects of carbon nanotube interconnects for energy efficient integrated circuits

Present and future prospects of carbon nanotube interconnects for energy efficient integrated circuits

Carbon-based Power Delivery Networks for nanoscale ICs: electrothermal performance analysis

Inductive Peaking Technology for Bandwidth Enhancement in Carbon Nanotube Bundle Interconnect

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