Temperature effects on charge retention characteristics of integrated SrBi2(Ta,Nb)2O9 capacitors

Abstract

Temperature effects on charge retention characteristics of integrated SrBi2(Ta,Nb)2O9 thin film capacitors were examined in the temperature range of 27–150°C. The decay in remanent polarization at 27°C was linear in logarithmic time from 10−3 to 105 s with a decay rate of 0.24 μC/cm2 per decade. The elevation of storage temperature resulted in an instantaneous decrease in remanent polarization, while the decay rate at elevated temperatures after the instantaneous decrease was as small as that at 27°C. The instantaneous decrease in remanent polarization caused by elevating the temperature was explained by the temperature dependence of spontaneous polarization in the vicinity of the second order transition temperature. The development of asymmetry in the hysteresis loop during high temperature storing indicates that the logarithmic time dependence of the decay in remanent polarization is due to redistribution of space charges rather than polarization reversal.

Contribution of structural order–disorder to the room-temperature photoluminescence of lead zirconate titanate powders

“…Photoluminescence (PL) is the most direct way to make light from a solid material and can be used for a wide range of applications. Lead zirconate titanate ðPbðZr; TiÞO 3 Þ is a solid solution of lead zirconate ðPbZrO 3 Þ and lead titanate ðPbTiO 3 Þ and is the most widely used compound for piezoelectric ceramic material as transducer and actuator in a large variety of technological, medical and microelectromechanical systems (MEMS) applications [1][2][3][4][5][6][7][8][9][10][11]. Lead zirconate titanate is thus widely studied but surprisingly its PL properties have been neglected.…”

Mechanism of Charge Retention Loss in Ferroelectric Pt/Pb(Zr,Ti)O 3 /Pt Capacitors and Its Relation to Fatigue and Imprint

“…Same-state retention can be defined as the ability to retain a given logic state as time elapses after writing. A long duration after writing can cause imprint [5,6,8], and can thus affect the retention characteristic of the subsequent logic state if it were written oppositely to the previous one. The retention characteristic of this oppositely written logic state is referred to as "opposite-state" retention.…”

“…A significant amount of polarization loss was found to occur within the first second after writing pulse (short-time regime, t < 1 s) and a relatively slight decay was followed thereafter (long-time regime, t > 1 s) [3,6,7]. In the short-time regime, depolarization field is considered to be the main origin of the polarization decay [3][4][5][6]11]. On the other hand, in the long-time regime, retention loss was found to be accompanied with imprint [5,6,8] The development of internal field due to the redistribution of defect charges was thought to be responsible for the retention loss and imprint.…”

“…In the short-time regime, depolarization field is considered to be the main origin of the polarization decay [3][4][5][6]11]. On the other hand, in the long-time regime, retention loss was found to be accompanied with imprint [5,6,8] The development of internal field due to the redistribution of defect charges was thought to be responsible for the retention loss and imprint. However, the detailed process of the internal field development nor the relation between the internal field and retention loss is not well understood as yet.…”

“…The retention loss is generally thought to be due to the presence of internal electric field [3][4][5][6][7][8][9][10][11], although, the mechanism of charge retention loss is not well understood yet. A significant amount of polarization loss was found to occur within the first second after writing pulse (short-time regime, t < 1 s) and a relatively slight decay was followed thereafter (long-time regime, t > 1 s) [3,6,7].…”