Temperature dependent study of carbon-doped InP/InGaAs HBT's

Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors

“…At high collector current levels of 40 mA, the increase of current gain is apparent due to the more rapid increase of β h . Figure 8 shows the comparisons of temperature dependence of current gains at high collector current densities for the different devices including AlInAs/InGaAs [25], InP/InGaAs [28], InP/InGaAs/InGaAsP [29] and the studied InP/InGaAlAs HBTs.…”

“…Figure 8. Temperature dependence of the current gains at high collector current densities for the AlInAs/InGaAs HBT [25],InP/InGaAs HBT[28], InP/InGaAs/InGaAsP HBT[29], and the studied InP/InGaAlAs HBT.…”

Temperature-Dependent Character istics of a Novel InP/InGaAlAs Heterojunction Bipolar Transistor

“…The previously reported data of the InP/InGaAs/InGaAsP [2], InP/InGaAs [6], and AlInAs/InGaAs HBT's [7] are also included for comparison in Fig. 3.…”

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

“…When the sample is cooled down to 40 K, the increasing rate of the current gain decreases with temperature. For HBTs with conventional material systems, such as AlGaAs/GaAs HBTs [7], AlInAs/GaInAs HBTs [8], and InP/InGaAs HBTs [9][10][11], the current gain decreases with decrease in temperature because of the where s is the capture cross-section, N t the concentration of the recombination center and v th the thermal velocity of the carriers, the electron lifetime is inversely proportional to the square root of the temperature. Considering the stable current gain at low temperatures and the temperature dependence of each component mentioned above, the electron mobility in the p-type base layer should have negative temperature dependence, which is presumably because the ionized impurity scattering is relatively unaffected owing to carrier freezeout and the high activation energy of Mg in the p-InGaN base layer.…”