In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In 0.53 Ga 0.34 Al 0.13 As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.
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