2006
DOI: 10.1063/1.2195694
|View full text |Cite
|
Sign up to set email alerts
|

Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays

Abstract: The photoluminescence properties of ZnO nanoneedle arrays, grown on silicon substrate by electrodeposition, are studied over the temperatures from 10K to 300K. There exist three emission bands in ultraviolet, violet, and green regions, respectively. With increasing temperature, these bands show different temperature dependences: A normal redshift for the ultraviolet emission, S-shaped shift for the violet emission, and blueshift for the green one. The origins of these three bands and their temperature-dependen… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

13
162
1
4

Year Published

2010
2010
2020
2020

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 312 publications
(187 citation statements)
references
References 25 publications
13
162
1
4
Order By: Relevance
“…As a result, at 50 K, the maximum of the green luminescence band is located at 2.1 eV, with its halfwidth being 400 meV. The authors of [27] consider their experimental results to be consistent with the ODMR data from [17].…”
Section: Green Luminescencesupporting
confidence: 75%
See 1 more Smart Citation
“…As a result, at 50 K, the maximum of the green luminescence band is located at 2.1 eV, with its halfwidth being 400 meV. The authors of [27] consider their experimental results to be consistent with the ODMR data from [17].…”
Section: Green Luminescencesupporting
confidence: 75%
“…The study of the temperature dependence of the maximum position of the green luminescence of ZnO nanoneedles showed that the following two processes contribute to the luminescence emission: (i) high-temperature recombination of electrons of the conduction band with holes at the VO-level and/or (ii) low-temperature recombination of electrons of Zni-centers with holes at the VO-level [27] (Fig. 5).…”
Section: Green Luminescencementioning
confidence: 99%
“…27,35 Moreover, the PL of the ZnO-T-ZnAl2O4 samples was shown to be strongly dependent on the excitation spot (plots (3) and (4) from Figure 2a) revealing that the optically active defects are inhomogeneously distributed.…”
Section: Znxme1-xoy 3-d Hybrid Networkmentioning
confidence: 99%
“…High fluence irradiation causes an increase of the relative weights these peaks compared to the UV peak. PL peaks ~ 2.9 eV and ~ 3.15 eV are generally attributed to Zn I related defects [14,15]. Also, it has been predicted that energy state of photo-excited O V s in ZnO may lie close to the conduction band minimum [16].…”
Section: Resultsmentioning
confidence: 99%