Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

Chattopadhyay, Sanatan; Dutta, Sansa; Pandit, Palash; Jana, Debnarayan; Chattopadhyay, S.; Sarkar, A.; Kumar, P.; Kanjilal, D.; Mishra, Dilip Kumar; Ray, S. K.

doi:10.1002/pssc.201000532

Cited by 13 publications

(4 citation statements)

References 15 publications

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“…Therefore, it is a common belief that the presence of a noble gas (e.g., Ar) during sputtering or wet-chemical synthesis inside a glove box does not affect properties of the product material. Moreover, Ar implantation is often used as a reference to eliminate the influence of implantation damage, 9,10,11,12,13 what implicitly assumes that Ar defects do not change the materials properties. Despite this, to the best of our knowledge, there is no a single work confirming the negligible role of noble gases in the stability of intrinsic defects and their compensation mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Noble gas as a functional dopant in ZnO

2019

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Owing to fully occupied orbitals, noble gases are considered to be chemically inert and to have limited effect on materials properties under standard conditions. However, using first-principles calculations, we demonstrate herein that the insertion of noble gas (i.e., He, Ne, or Ar) in ZnO results in local destabilization of electron density of the material driven by minimization of an unfavorable overlap of atomic orbitals of the noble gas and its surrounding atoms. Specifically, the noble gas defect (interstitial or substitutional) in ZnO pushes the electron density of its surrounding atoms away from the defect. Simultaneously, the host material confines the electron density of the noble gas. As a consequence, the interaction of He, Ne, or Ar with O vacancies of ZnO in different charge states q (ZnO:VO q ) affects the vacancy stability and their electronic structures. Remarkably, we find that the noble gas is a functional dopant that can delocalize the deep in-gap VO q states and lift electrons associated with the vacancy to the conduction band.

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Section: Introductionmentioning

confidence: 99%

Noble gas as a functional dopant in ZnO

2019

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“…Transmittance increases in the long wavelengths can be due to smaller absorption but also due to decrease of free carrier concentration. Red shifting of the absorption edge is an indication of increased band tailing due to defect generation 37,38 . The transmittance of aged and laser annealed samples from (ii) and (iii) films that showed largest mobility after laser processing are also depicted with green lines.…”

Section: Optical Spectrophotometrymentioning

confidence: 99%

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

Tsakonas¹,

Кузнецов²,

Cranton³

et al. 2017

J. Phys. D: Appl. Phys.

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We report the low temperature (T<70 ºC) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm 2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T<70 ºC and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25%-35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm 2 V-1 s-1 at a carrier density of 2.3×10 18 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements.

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“…Iqbal et al [14], Kondkar et al [3] and Vijayakumar et al [15] improved ZnO film resistivity by irradiating the material with C, Au and O ions, respectively. On the other hand, the studies made by Chattopadhyay et al [16], Khawal et al [17] and Abdel-Galil et al [18] showed changes in the band gap and the resistivity of ZnO when it was irradiated with Ar, Li and O ions, respectively. These works show that even light ions can produce essential changes in the optical and electrical properties of the semiconductor; however, limited reports have been found regarding the irradiation of He 2+ ions in ZnO.…”

Section: Introductionmentioning

confidence: 96%

Effect of ⁴He²⁺ ion irradiation on the optical, electrical, morphological, and structural properties of ZnO thin films

López-Suárez

Acosta

Zavala

2022

Mater. Res. Express

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A study of the effect of 2.5 MeV 4He2+ ion irradiation on the optical, electrical, morphological and structural properties of ZnO thin films is presented. Polycrystalline zinc oxide thin films were deposited on soda lime glass substrates using the spray pyrolysis technique. During the process, the substrates’ surfaces were kept at 400, 450 and 500°C. The samples were analyzed by different techniques and the optical results showed a red shift in the energy band gap after irradiation. It was also confirmed that the wurtzite-type hexagonal structure of the ZnO films remained after irradiation, the crystallite size increased and the lattice parameters decreased due to He2+ irradiation. SEM micrographs revealed that ion irradiation favors the nucleation and the formation of grains in the films. Micrographs showed nanometric particles with spherical and flake-like forms, which depend on the deposition temperature. A decrement in the average particle size of the samples deposited at 400 and 450°C was observed after irradiation; meanwhile, an increase in the particle size was detected in the film deposited at 500°C. The resistivity values increased with He2+ ion irradiation.

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Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

Abstract: We report a systematic study on 1. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation.

Cited by 13 publications

References 15 publications

Noble gas as a functional dopant in ZnO

Noble gas as a functional dopant in ZnO

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

Effect of ⁴He²⁺ ion irradiation on the optical, electrical, morphological, and structural properties of ZnO thin films

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Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

Abstract: We report a systematic study on 1. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation.

Cited by 13 publications

References 15 publications

Noble gas as a functional dopant in ZnO

Noble gas as a functional dopant in ZnO

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

Effect of 4He2+ ion irradiation on the optical, electrical, morphological, and structural properties of ZnO thin films

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Effect of ⁴He²⁺ ion irradiation on the optical, electrical, morphological, and structural properties of ZnO thin films