Abstract:We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al 2 O 3 /SiO 2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current-th… Show more
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