Temperature-dependent nonlinear Hall effect in macroscopic Si-MOS antidot array

Abstract

By measuring magnetoresistance and Hall effect in classically moderate perpendicular magnetic field in Si-MOSFET-type macroscopic antidot array we found a novel effect: nonlinear with field, temperature-and density-dependent Hall resistivity. We discuss qualitative explanation of the phenomenon and suggest that it might originate from strong temperature dependence of the resistivity and mobility in the shells of the antidots.

Simple mechanism that breaks the Hall effect linearity at low temperatures

“…The discussed effects could be also observed in the systems with a tendency to formation of spatially inhomogeneous state [31][32][33], or structurally non-uniform systems, e.g., like mixture of single-layer and bilayer graphene, which naturally obtained in the chemical vapour deposition growth process [34]. A promising idea is to prepare a tunable 2D inhomogeneous system using independent gate electrodes controlling different parts of the 2D electron gas [35,36]. Tunability of the system components may strongly enhance the effects under discussion.…”

Influence of the pore diameter in Cu/Co/Cu antidots: A XANES study

“…Nanocompounds studied over the last two decade are antidots or nanopores, which constitute two-dimensional nanostructures in geometrically ordered arrays presenting the counterparts to dot nanostructures [1][2][3][4]. The physical properties of antidots are known to be directly linked to both the diameter of nanopores and to their spacing, which represent the key parameters in the design of antidots for industrial applications (see [5] for review).…”