Simple mechanism that breaks the Hall-effect linearity at low temperatures

Kuntsevich, A. Yu.; Shupletsov, A. V.; Rakhmanov, A. L.

doi:10.1103/physrevb.102.155426

Cited by 4 publications

(2 citation statements)

References 39 publications

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“…However, for these on-silicon and on-mica samples, the parameter α WAL values are ∼ −1.2 and −4, respectively. We guess that such values can indicate more complicated behavior of MC, apparently, due to the transport current redistribution in the magnetic field for the inhomogeneous system …”

Section: Resultsmentioning

confidence: 99%

“…We guess that such values can indicate more complicated behavior of MC, apparently, due to the transport current redistribution in the magnetic field for the inhomogeneous system. 42 The transport data are changed significantly when we measure the BSTS film on the SiO 2 /Si/graphene substrate. In this case, after the approximation of the MC data with two HLN formulas for weak localization (WL) and WAL and subtraction of the Lorenz contribution 43 ∼ B 2 , the α WAL value turned out to be α WAL ∼ −1 and α WL ∼ 1, typical of the WL case.…”

Section: Methods Of Crystal Growth and Structural Characterizationmentioning

confidence: 99%

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Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Stepina

Ishchenko

Golyashov

et al. 2022

Crystal Growth & Design

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Bi y Sb2–y Te3–x Se x (BSTS) topological insulator (TI) thin films were grown by physical vapor deposition (PVD) and molecular-beam epitaxy (MBE) and compared by growth parameters, substrate selection, preparation, and resulting film properties. For the MBE-grown BSTS on Si(111)-(7 × 7), preliminary deposition of the Bi2Te3 buffer layer at the Te-rich growth condition was found to improve the film structural properties. Using a BSTS crystal as the main source for deposition allows us to significantly decrease the molecular Te flux. For the PVD growth, optimal conditions (gas flux, source, and substrate temperatures) were found for a morphologically smooth BSTS film on mica. In order to grow the epitaxial BSTS film on a Si/SiO2 substrate, graphene was successfully used as the pre-epitaxial layer. A newly developed chemical preparation method of atomically clean and structurally ordered epi-layer surfaces allowed us to study the electronic structure of the grown TI films without using capping layers. The surface states with Dirac-like dispersion at the Γ-point in the surface Brillouin zone were detected by angle-resolved photoelectron spectroscopy. Photoemission measurements showed a change in the surface Fermi level position depending on the composition of BSTS films. The magnetoconductivity data demonstrated a strong dependence of the parameters describing a weak antilocalization on the substrate used.

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Section: Resultsmentioning

confidence: 99%

Section: Methods Of Crystal Growth and Structural Characterizationmentioning

confidence: 99%

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Stepina

Ishchenko

Golyashov

et al. 2022

Crystal Growth & Design

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Hall effect in a two-dimensional disordered Lorentz gas

et al. 2023

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Indication for an anomalous magnetoresistance mechanism in (Bi,Sb)2(Te,Se)3 three-dimensio

Stepina,

Bazhenov,

Shumilin

et al. 2023

Phys. Rev. B

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Simple mechanism that breaks the Hall-effect linearity at low temperatures

Cited by 4 publications

References 39 publications

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Hall effect in a two-dimensional disordered Lorentz gas

Indication for an anomalous magnetoresistance mechanism in (Bi,Sb)2(Te,Se)3 three-dimensio

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Simple mechanism that breaks the Hall-effect linearity at low temperatures

Cited by 4 publications

References 39 publications

Epitaxial Growth of the BiySb2–yTe3–xSex 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Epitaxial Growth of the BiySb2–yTe3–xSex 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Hall effect in a two-dimensional disordered Lorentz gas

Indication for an anomalous magnetoresistance mechanism in (Bi,Sb)2(Te,Se)3 three-dimensio

Contact Info

Product

Resources

About

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy