Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate

Liu, Z. H.; Arulkumaran, S.; Ng, G. I.

doi:10.1109/mwsym.2009.5165812

Cited by 17 publications

(15 citation statements)

References 14 publications

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“…1. The small signal ECPs and noise source coefficients extraction procedure were described elsewhere [3].…”

Section: Experimental Details and Modeling Proceduresmentioning

confidence: 99%

“…M. Thorsell et al has made an empirical thermal modeling of the microwave noise based on fitted bias coefficients for AlGaN/GaN HEMTs on SiC [2]. Recently we have carried out the temperature dependent microwave noise measurement and proposed an empirical modeling procedure using a simple linear or quadratic approximation for our AlGaN/GaN HEMT on Si substrate and presented the results in [3]. However, such empirical models have their inherent limitations in that their temperature coefficients have not much physical meaning, and hence it will be difficult to correlate the temperature variance with the physical mechanisms.…”

Section: Introductionmentioning

confidence: 99%

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Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Liu

Arulkumaran

2009

2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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In this paper, we present the analytical modeling on the temperature dependent microwave noise in AlGaN/GaN HEMTs on Si substrate over a wide temperature range from -50 to 200 ο C. The noise source coefficients and small signal equivalent circuit parameters (ECPs) were extracted and their variations over temperature were fitted using a simple quadratic relationship. An analytical model for the overall noise parameters including temperature dependence is proposed based on the Pucel's PRC model and verified with the measured temperature-dependent noise parameters. The feedback capacitance C gd was found to be important to accurately simulate all the measured noise parameters over temperature.

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“…1. The small signal ECPs and noise source coefficients extraction procedure were described elsewhere [3].…”

Section: Experimental Details and Modeling Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Liu

Arulkumaran

2009

2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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“…A crucial figure of merit for microwave transistors to assess their RF performance is the short-circuit currentgain (h 21 ). This parameter is an important indicator to identify the unity current-gain frequency or cut-off frequency (f T ) and it should move off with a slope of −20 dB/decade.…”

Section: Introductionmentioning

confidence: 99%

“…This parameter is an important indicator to identify the unity current-gain frequency or cut-off frequency (f T ) and it should move off with a slope of −20 dB/decade. [1][2][3] However, it is quite often noticed that at high frequencies, h 21 deviates from its optimal behavior, owing to the occurrence of the current-gain peak (CGP). The earlier studies have demonstrated that the origin of the CGP is because of the resonance of extrinsic inductances and the intrinsic capacitances.…”

Section: Introductionmentioning

confidence: 99%

“…The earlier studies have demonstrated that the origin of the CGP is because of the resonance of extrinsic inductances and the intrinsic capacitances. [4][5][6][7][8][9][10] It has been shown that such a resonance leads to a dip in the open-circuit output impedance magnitude (Z 22 ), thereby turning into the peak in h 21 . Therefore, f T should be estimated by extrapolation of the low-frequency h 21 to unity with a − 20 dB/decade slope.…”

Section: Introductionmentioning

confidence: 99%

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Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Alim

Hasan

Rezazadeh

et al. 2020

Int J RF Microw Comput Aided Eng

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Thermal and multibias behavior of the peak in the short‐circuit current‐gain (h21) has been investigated for a GaN HEMT, aiming to contribute to an extensive knowledge on it. To obtain a simple and complete insight of this phenomenon and its influence in device performance over operating conditions, high‐frequency multibias scattering (S‐) parameter measurements have been analyzed from low to high temperature. It has been observed that the current‐gain peak might get to be more or less serious depending on the working circumstances. The peak affecting h21 has been successfully reproduced by using an equivalent‐circuit model. Moreover, a novel procedure has been developed to interpret this kind of phenomenon by quantifying the area of the current‐gain peak (ACGP), which is denoted as the area corresponding to h21 curves with and without the peak. It is found that the ACGP is strongly dependent on bias and less dependent on temperature. The relevance of a comprehensive evaluation of the peak in h21 lies in its usefulness for empowering RF engineers to efficiently consider it for both device modeling and circuit design.

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Neural network electrothermal modeling approach for microwave active devices

Jarndal

2019

Int J RF Microw Comput Aided Eng

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This article presents an artificial neural network (ANN) approaches for small‐ and large‐signal modeling of active devices. The small‐signal characteristics were modeled by S‐parameters based feedforward NN models. The models have been implemented to simulate the bias, frequency and temperature dependence of measured S‐parameters. Feedback NN based large‐signal model was developed and implemented to simulate the drain current and its inherent thermal effect due to self‐heating and ambient temperature. Both small‐ and large‐signal models have been validated by measurements for 100‐μm and 1‐mm GaN high electron mobility transistors and very good agreement was obtained.

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Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate

Cited by 17 publications

References 14 publications

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Neural network electrothermal modeling approach for microwave active devices

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