Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation

Tsou, Chuan‐Wei; Ji, Ming; Bakhtiary-Noodeh, Marzieh; Detchprohm, Theeradetch; Dupuis, R. D.; Shen, Shyh Chiang

doi:10.1109/ted.2019.2933421

Cited by 18 publications

(13 citation statements)

References 31 publications

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“…It is inversely proportional to the trap DOS D T (volume −1 energy −1 ) at the primary (see A in Figure 4 b) trap energy and can vary depending on

. A summary of different T 0 values reported in the literature [ 7 , 24 , 25 , 27 , 28 , 29 , 30 , 33 , 37 , 39 ] is provided in Figure 7 for reference, showing consistent results for the values extrapolated in this paper.…”

Section: Resultssupporting

confidence: 81%

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

et al. 2021

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This work investigates p+n−n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were identified through temperature-dependent current–voltage characterization. Second, the breakdown voltage of the diodes was modelled through TCAD simulations based on the incomplete ionization of Mg in the p+ GaN layer. Finally, the developed simulation model was utilized to estimate the impact of varying the p-doping concentration on the design of breakdown voltage; while high p-doped structures are limited by the critical electric field at the interface, low p-doping designs need to contend with possible depletion of the entire p-GaN region and the consequent punch-through. A trade-off on the value of p-doping therefore exists to optimize the breakdown.

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“…It is inversely proportional to the trap DOS D T (volume −1 energy −1 ) at the primary (see A in Figure 4 b) trap energy and can vary depending on

Section: Resultssupporting

confidence: 81%

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

et al. 2021

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“…This kind of material always exhibits the simultaneous existence of two or more ferroic properties like ferroelectric, ferromagnetism and ferroelasticity, which show tremendous application foregrounds such as actuators, energy harvesting devices, memory elements and sensors. [1][2][3][4] As a room temperature multiferroic material, BiFeO 3 (BFO) is one of the most studied systems in current years. [5][6][7] In bulk form, BFO possesses a distorted perovskite structure with rhombohedral symmetry (space group R3c).…”

Section: Introductionmentioning

confidence: 99%

“…[15] To improve the multiferroic properties of BFO ceramics, many efforts have been done including varieties of synthetic techniques, chemical substitution, and formation of solid solution with other ABO 3 perovskite materials. [3,[16][17][18][19] Among the potentially multiferroic solid solutions, BiFeO 3 -BaTiO 3 displays a high Tc and magnetoelectric coupling performance. [20][21][22][23] The BFO-based solid solution can effectively prevent the generation of the second phase and increase the resistivity of the samples.…”

Section: Introductionmentioning

confidence: 99%

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Structure, Dielectric and Multiferroic Properties of Bi0.85Nd0.15Fe0.98Zr0.02O3 in Ba and Ti Co-Doping

Zeng

Zhang

et al. 2021

Preprint

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Multiferroic (1- x)Bi0.85Nd0.15Fe0.98Zr0.02O3- xBaTiO3 (x = 0, 0.275, 0.3, 0.325, 0.35, 0.375, 0.4) ceramics were synthesized by the conventional solid state reaction method. X-ray diffraction studies confirm the phase transition from rhombohedral perovskite structure to pseudocubic structure with the introduction of BaTiO3. The results of the refinement indicate the BaTiO3 is successfully doped into the crystal lattice. The microstructure analysis shows that the average grain size increases with the introduction of BaTiO3. An increase in remanant polarization has been achieved at room temperature as the BaTiO3 concentration increasing. A greatly reduced leakage current density of about two orders of magnitude is observed in x = 0.375 (J = 2.4×10− 7 A/cm2) ceramic. The dielectric properties have been enhanced by the addition of BaTiO3, which is attributed to the reduction in Fe2+ ions and oxygen vacancies. Due to the grain effect and structure transition caused by the doping of BaTiO3, the magnetization reveals a slight decrease while the coercive field for x = 0.325 (Hc = 1785.8 Oe) increases to 6.4 times of the undoped ceramic.

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“…However, scaled device dimensions cause the introduction of leakage current sources such as subthreshold and gate leakage currents. These leakage current sources increase the power dissipation [2,3]. Furthermore, the scaled device dimensions cause an increase in the gate electric field intensity, which adds more electric-field stress.…”

Section: Introductionmentioning

confidence: 99%

Design of a Voltage to Time Converter with High Conversion Gain for Reliable and Secure Autonomous Vehicles

et al. 2020

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Automation of vehicles requires a secure, reliable, and real-time on-chip system. These systems also require very high-speed and compact on-chip analog to digital converters (ADC). The conventional ADC cannot fulfill this requirement. In this paper, we proposed a Darlington pair- and source biasing-based high speed, secure, and reliable voltage to time converter (VTC). It is a compact, high-speed design and gives high conversion gain. The source biasing also helps to increase the input voltage range. The conversion gain of the proposed circuit is 101.43ns/v, which is 52 times greater than the gain achieved by state-of-the-art design. It also shows less effect of process variation and bias temperature instability.

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Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation

Cited by 18 publications

References 31 publications

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Structure, Dielectric and Multiferroic Properties of Bi0.85Nd0.15Fe0.98Zr0.02O3 in Ba and Ti Co-Doping

Design of a Voltage to Time Converter with High Conversion Gain for Reliable and Secure Autonomous Vehicles

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Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation

Cited by 18 publications

References 31 publications

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Structure, Dielectric and Multiferroic Properties&nbsp;of Bi0.85Nd0.15Fe0.98Zr0.02O3 in Ba and Ti Co-Doping

Design of a Voltage to Time Converter with High Conversion Gain for Reliable and Secure Autonomous Vehicles

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Structure, Dielectric and Multiferroic Properties of Bi0.85Nd0.15Fe0.98Zr0.02O3 in Ba and Ti Co-Doping