Temperature dependent in situ doping of ALD ZnO

Baji, Zs.; Lábadi, Z.; Horváth, Zsolt Endre; Fried, M.; Szentpali, B.; Bársony, I.

doi:10.1007/s10973-011-1641-3

Cited by 24 publications

(7 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A similar change in orientation with thickness is also observed for pure ZnO films deposited by ALD [10]. The preferred orientation in ZnO depositions by ALD has previously been shown to vary with temperature [11], dopant concentration [12][13][14], pulse and purge lengths [15], electric field [16] and substrate [17]. There may be many possible mechanisms for such evolution in preferred orientation.…”

Section: Structural Propertiessupporting

confidence: 65%

Thickness dependent structural, optical and electrical properties of Ti-doped ZnO films prepared by atomic layer deposition

Bergum

Fjellvåg

Nilsen

2015

Applied Surface Science

View full text Add to dashboard Cite

Section: Structural Propertiessupporting

confidence: 65%

Thickness dependent structural, optical and electrical properties of Ti-doped ZnO films prepared by atomic layer deposition

Bergum

Fjellvåg

Nilsen

2015

Applied Surface Science

View full text Add to dashboard Cite

“…In a typical ALD process for AZO, diethyl zinc (ZnEt 2 , DEZ), TMA, and H 2 O are used as precursors 6, 137–139. Doping is achieved by using a basic AB‐type sequence repeated for each binary material present, namely ZnO and Al 2 O 3 .…”

Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

View full text Add to dashboard Cite

Atomic layer deposition (ALD) has become an enabling technology for a wide range of applications where depositions of high quality, conformal thin films are desired. The needs of conducting materials with tailored properties call for ALD metallization processes that can meet diverse requirements in various applications. Recent developments of ALD processes for conducting materials have led to some novel ALD chemistries. Most of the ALD binary materials are formed in a typical AB sequence from two reactants. More complex ternary and doped materials can be achieved according to the same AB sequence principle through nano‐lamination of two binary materials using three or more reactants. It is demonstrated that ternary and elemental materials can be deposited using two reactants with a basic ALD AB sequence. Furthermore, an ALD process is not limited to an AB sequence, an ABC sequence with a surface‐controlled ALD reaction is also possible. A double replacement reaction mechanism is proposed with examples of novel processes such as TaCxNy, WCx, and WNxCy. Recent developments of ALD metallization processes have opened up more opportunities of producing novel ALD materials for industrial applications.

show abstract

“…40 The opposite trend observed for the mobility is probably due to the increase of ionic impurity scattering proportionally to the carrier concentration. 38,42 Generally, this is not the case for undoped ZnO films in which these two electrical parameters follow the same trend. 25,38,39 At the same time, the resistivity decreases due to the carrier concentration increase.…”

Section: Resultsmentioning

confidence: 99%

“…Extrinsic doping of ZnO is known to have more pronounced effect at elevated temperatures. 18,42,43 Therefore, increasing the sulfur content of Zn(O,S) films leads to an increase of the lattice mismatch and to films with less crystalline structures. Figure 5 shows the cross-section and top view SEM images of Zn(O,S) films synthesized at deposition temperatures from 120 to 220 C. For T dep < 180 C, the grains have a vertical platelike structure, but are less distinct at T dep ¼ 120 and 160 C. Significant changes of the film morphology, grain size, and orientation can be observed at T dep ¼ 180 C. Indeed, at T dep !…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se2 solar cells

Bugot¹,

Schneider²,

Jubault³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Thin films of Zn(O,S) were deposited by atomic layer deposition from diethylzinc, water (H2O), and hydrogen sulfide (H2S). First, a study on the influence of the H2S/(H2O+H2S) pulse ratio from pure ZnO to pure ZnS was performed at deposition temperature Tdep=120 and 200 °C. Zn(O,S) films had higher S content than expected, and this effect was stronger at Tdep=200 °C. Then, Zn(O,S) films have been synthesized over the range of temperature 120–220 °C at the constant H2S/(H2O+H2S) pulse ratio of 9%. For Tdep<180 °C, high and almost constant S content has been measured in the films. The significant increase of the S/(O+S) atomic ratio for Tdep>180 °C confirmed that exchange reactions occurred between the Zn(O,S) growing films and H2S. The grazing incidence x-ray diffraction patterns showed Zn(O,S) films with hexagonal wurtzite structures and with an optimum crystallization for temperatures Tdep=160–180 °C. Indeed, in this temperature range, well crystallized and large grains were obtained which was in good correlation with the film morphology determined by scanning electron microscope; and Hall effect measurements revealed low resistivities, high carrier concentrations (>1019 cm−3), and low mobilities. From these results, the authors propose the existence of a temperature range where the properties undergo significant changes while the atomic composition remains constant.

show abstract

Temperature dependent in situ doping of ALD ZnO

Cited by 24 publications

References 18 publications

Thickness dependent structural, optical and electrical properties of Ti-doped ZnO films prepared by atomic layer deposition

Thickness dependent structural, optical and electrical properties of Ti-doped ZnO films prepared by atomic layer deposition

Recent Developments of Atomic Layer Deposition Processes for Metallization

Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se2 solar cells

Contact Info

Product

Resources

About