Temperature-Dependent I–V Characteristics of Organic–Inorganic Heterojunction Diodes

Ahmed, M. M.; Каримов, Х. С.; Моиз, С. А.

doi:10.1109/ted.2003.820650

Cited by 69 publications

(34 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2. DC I-V characteristics were evaluated for varying temperatures ranging from 40 to 60 o C with a conventional measurement system of good accuracy, the details of which is given elsewhere [12]. The temperature of the device was varied with a tungsten filament in a specially designed jar using an in situ temperature measurement facility.…”

Section: Methodsmentioning

confidence: 99%

Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics

Моиз¹,

Ahmed²,

Каримов³

2005

ETRI J

View full text Add to dashboard Cite

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on In 2 O 3 substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices (Al/OD/In 2 O 3 ) have been evaluated at varying temperatures ranging from 40 to 60°C. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in Al/OD/In 2 O 3 devices have been classified as low temperature (≤ 50°C) and high temperature characteristics (approximately 60°C). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

show abstract

Section: Methodsmentioning

confidence: 99%

Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics

Моиз¹,

Ahmed²,

Каримов³

2005

ETRI J

View full text Add to dashboard Cite

show abstract

“…This indicates that the reverse current should be limited by another transport mechanism. The junction leakage was primarily dominated by the generation and recombination of carriers in the Si substrate [18,19].The resulting reverse current from generation recombination of carriers is thermally activated and is governed by [20]:…”

Section: Dark Current-voltage Characteristicsmentioning

confidence: 99%

Electrical and photovoltaic properties of CuTPP/p-Si organicinorganic hybrid hetrojunction

El-Nahass¹,

Metwally²,

Farag³

et al. 2014

IOSRJAP

View full text Add to dashboard Cite

show abstract

“…Organic/inorganic heterojunctions have wide applications in solar cells, photodetectors, light emitting diodes, communication systems, and industry [1][2][3][4][5]. The generation of interface traps are one of the main reasons of instability and poor performance of these devices [6].…”

Section: Introductionmentioning

confidence: 99%

Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

et al. 2010

Self Cite

View full text Add to dashboard Cite

Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance (R s ) interface states (D it ) of the junction. Measured capacitance and conductance were corrected for R s . The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of 10 12 cm −2 eV −1 .

show abstract

Temperature-Dependent I–V Characteristics of Organic–Inorganic Heterojunction Diodes

Cited by 69 publications

References 8 publications

Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics

Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics

Electrical and photovoltaic properties of CuTPP/p-Si organicinorganic hybrid hetrojunction

Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

Contact Info

Product

Resources

About