Temperature-dependentI–VandC–Vcharacteristics of chemically-grown Y_0.95Ca_0.05MnO₃/Si thin films

The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure

“…These CTMs are generally named as metal electrodelimited transport mechanisms (MLTMs) or transport mechanisms limited with the charge carrier injection. The other CTMs depend only on the electrical properties of the dielectric material itself and they are called dielectric material bulklimited conduction mechanisms (BLTMs) [38][39][40][41][42][43][44][45][46]. However, there are other CTMs that may contribute to the conduction current through a thin dielectric material film.…”

“…The TE current highly depends on the temperature, but the tunneling current is almost independent of the temperature. The BLTMs consist of grain-boundary-limited conduction, space-charge-limited current, hopping conduction, PFE, ohmic conduction and ionic conduction [38][39][40][41][42][43][44][45][46].…”

Interface based field effect configuration and charge conduction mechanisms for manganite thin film heterostructures

“…In order to prepare the presently targeted LMO/LCMO/LAO manganite-manganite structure consisting of a 50 nm LMO layer grown on a LCMO 100 nm thin film on a LAO (100) single crystalline substrate, the cost effective, simple and vacuum free CSD method was used by employing the acetate precursor route. 12,15,[31][32][33][34][35][36] For the growth of the 100 nm thick LCMO mixed valent manganite layer, the acetate precursor route was employed with different steps and parameters as described in earlier reports. [31][32][33] Similarly, the 50 nm thick LMO manganite layer was grown on the thin film of LCMO/LAO using the same acetate precursor based simple sol-gel method with the parameters and steps as listed in earlier reports.…”

“…[8][9][10][11][12][13][14] Mixed valent manganites have been investigated extensively for various possible potential applications such as capacitors, p-n junctions, field effect devices, magnetic field and temperature sensors, spin transistors, memristor devices, RS devices, nonvolatile memory devices, etc. [15][16][17][18][19][20] To fulfill the increased demand for materials with astonishing properties and characteristics for today's advanced technologies, researchers have always been active in investigating different functional materials for improving their functional properties as well as to make them more suitable for their potential practical applications including spintronic applications. In the context of spintronic technology, one can realize the fine control over the different electronic states of functional materials (including mixed valent manganites) as an effective tool to develop functional oxide based electronic devices.…”

“…8–14 Mixed valent manganites have been investigated extensively for various possible potential applications such as capacitors, p–n junctions, field effect devices, magnetic field and temperature sensors, spin transistors, memristor devices, RS devices, nonvolatile memory devices, etc. 15–20…”