Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

Yuan, Guoliang; Liu, J.-M.; Wang, Y. P.; Wu, Di; Zhang, S. T.; Shao, Qiyue; Liu, Z. G.

doi:10.1063/1.1734685

Cited by 39 publications

(22 citation statements)

References 18 publications

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“…Finally, we point out here that the rejuvenation effect of ferroelectric fatigue [26], which shows the recovery of the spontaneous polarization as well, is different from our results related to ferroelectric aging or de-aging. The difference is that ferroelectric aging involves a short-range diffusion process [6], while fatigue involves a long-range diffusion process [27].…”

Section: Discussionmentioning

confidence: 99%

In situobservation of thermally activated domain memory and polarization memory in an aged K⁺-doped (Ba, Sr)TiO₃single crystal

Xue

Gao

Bao

et al. 2011

J. Phys.: Condens. Matter

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Different ferroelectric domains are degenerate states of the same ferroelectric phase; thus they are energetically equivalent and, in principle there exists no preference for a particular domain pattern. However, the existence of point defects is considered to stabilize certain preferential domain states. In order to study the temperature violation on such stabilized domains, we performed in situ observation on an aged K⁺-doped (Ba, Sr)TiO₃ single crystal and found that both the domain configuration and polarization state can be memorized after experiencing a thermally activated ferro-para-ferro transition cycle, as manifested by a reappearance of the same domain pattern and double P-E hysteresis loop. In contrast, after the sample was aged in the paraelectric state (>10 min), these memory effects disappeared. The above memory effects are considered to originate from the interaction between point defects and the crystal symmetry driven by a symmetry-conforming tendency of point defects. Such a mechanism suggests that the memory effects are relevant to the existence of acceptor dopant and associated mobile oxygen vacancies, and they are not restricted to a particular dopant. Thus similar memory effects are expected to exist in a wide range of ferroelectric materials with acceptor doping.

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Section: Discussionmentioning

confidence: 99%

In situobservation of thermally activated domain memory and polarization memory in an aged K⁺-doped (Ba, Sr)TiO₃single crystal

Xue

Gao

Bao

et al. 2011

J. Phys.: Condens. Matter

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“…The improved fatigue properties of BNTM at low T below 200 K can be explained by the weaker effect of domain wall pinning and unpinning. 25,26 The low density domain walls at low T can suppress the domain pinning and make the diffusion of defects and charges more difficult. Thus the dependence of fatigue behaviors on T is weak.…”

Section: (A) and (B) It Can Be Found That The Dependences Ofmentioning

confidence: 99%

Polarization switching and fatigue characteristics of highly (117)-oriented Bi_3.15Nd_0.85Ti_2.99Mn_0.01O₁₂ ferroelectric thin films at both low and elevated temperatures

et al. 2017

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“…It has been reported that the fatigue behavior correlates to the defect traps at domain boundaries. 22,23 Because the off-stoichiometric SBT buffer layers in the present study have little influence on the composition of superposed SBT film ͑Fig. 3͒, the SBT/buffer capacitors could retain fatigue-free characteristics ͑Fig.…”

Section: Resultsmentioning

confidence: 94%

Seeding Effect by Off-Stoichiometric SrBi[sub 2]Ta[sub 2x]O[sub 9] Thin Buffer Layer on the Properties of SrBi[sub 2]Ta[sub 2]O[sub 9] Thin Films

Hsu

Leu

2010

J. Electrochem. Soc.

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The seeding effect on the crystallization behaviors of the SrBi 2 Ta 2 O 9 strontium bismuth tantalite ͑SBT͒ phase on top of a thin Aurivillius buffer layer, SrBi 2 Ta 2x O 9 , was studied. A uniform microstructure and a preferred polar a-axis orientation within the SrBi 2 Ta 1.8 O 9 buffered SrBi 2 Ta 2 O 9 thin film were promoted to achieve a high remanent polarization ͑2P r ͒ value of about 19.7 C/cm 2 . Furthermore, the SBT/buffer heterostructure constructed by the two-step process showed a significantly improved leakage property compared with the nonbuffered SBT. The off-stoichiometric thin buffer layer demonstrates a simple method to improve the microstructure, polar a-axis orientation, and electric characteristics and to introduce less defects in the superposed SrBi 2 Ta 2 O 9 thin films. Strontium bismuth tantalite ͑SrBi 2 Ta 2 O 9 , SBT͒, among ferroelectric materials, has been intensively studied for nonvolatile ferroelectric random access memory ͑FeRAM͒ applications because of its relatively low operation voltage, low leakage current, and fatigue-free properties with the Pt bottom electrodes. 1 However, it has a low remanent polarization value and a high crystallization temperature, which would be the main disadvantage for high density FeRAM integration in the future. Because SBT does not exhibit any dominant self-textural growth mechanisms, it is therefore mainly governed by the underlying substrate and the interfacial properties. In most FeRAM applications, the standard substrate for SBT is platinum film. Pure platinum is not an ideal substrate for the nucleation of perovskite, and SBT films on top of Pt electrodes always show a preferential ͑00l͒ polycrystalline structure due to the match of lattices. 2 It has been reported that the ferroelectric properties of SBT thin films on the a-b plane are better than those along the c-axis. 3 Therefore, adopting a seeding layer ͑Ta, Bi-Ta, Bi 2 O 3 , Bi 4 Ti 3 O 12 , stoichiometric SBT and yttria-stabilized zirconia/SrZrO 3 , etc.͒ on the top of Pt might be beneficial for better film crystallization or superior texture of SBT. 2,4-11 The polarization properties of SBT could be improved through seeding technology by controlling the film's preferred orientation. However, employing a non-SBT seeding layer usually induced the deviation of SBT composition from stoichiometric and resulted in the formation of undesirable second phases or defects; few researchers investigated their influences on the electric properties, in addition to polarization, of SBT, e.g., leakage property. Another effective method for controlling the crystallization kinetics and the microstructure of ferroelectrics would be introducing a crystallographically preferred nucleation site in the form of many separated seeding particles ͑stoichiometric SBT͒ into the system. 12-16 The SBT films were observed to have lower crystallization temperatures and less pyrochlore or fluorite phases by the incorporation of SBT seeds or templates into SBT films. Indeed, such methods enhanced the ferroelectric pr...

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Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

Cited by 39 publications

References 18 publications

In situobservation of thermally activated domain memory and polarization memory in an aged K⁺-doped (Ba, Sr)TiO₃single crystal

In situobservation of thermally activated domain memory and polarization memory in an aged K⁺-doped (Ba, Sr)TiO₃single crystal

Polarization switching and fatigue characteristics of highly (117)-oriented Bi_3.15Nd_0.85Ti_2.99Mn_0.01O₁₂ ferroelectric thin films at both low and elevated temperatures

Seeding Effect by Off-Stoichiometric SrBi[sub 2]Ta[sub 2x]O[sub 9] Thin Buffer Layer on the Properties of SrBi[sub 2]Ta[sub 2]O[sub 9] Thin Films

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Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

Cited by 39 publications

References 18 publications

In situobservation of thermally activated domain memory and polarization memory in an aged K+-doped (Ba, Sr)TiO3single crystal

In situobservation of thermally activated domain memory and polarization memory in an aged K+-doped (Ba, Sr)TiO3single crystal

Polarization switching and fatigue characteristics of highly (117)-oriented Bi3.15Nd0.85Ti2.99Mn0.01O12 ferroelectric thin films at both low and elevated temperatures

Seeding Effect by Off-Stoichiometric SrBi[sub 2]Ta[sub 2x]O[sub 9] Thin Buffer Layer on the Properties of SrBi[sub 2]Ta[sub 2]O[sub 9] Thin Films

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In situobservation of thermally activated domain memory and polarization memory in an aged K⁺-doped (Ba, Sr)TiO₃single crystal

In situobservation of thermally activated domain memory and polarization memory in an aged K⁺-doped (Ba, Sr)TiO₃single crystal

Polarization switching and fatigue characteristics of highly (117)-oriented Bi_3.15Nd_0.85Ti_2.99Mn_0.01O₁₂ ferroelectric thin films at both low and elevated temperatures