Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films

Abstract

The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while Ure increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high Ure (≈61 J/cm3) and low leakage current density (≈3.5 × 10−8 and 3.5 × 10−5 A/cm2 at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.

High energy-storage performance of 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 relaxor ferroelectric thin films prepared by RF magnetron sputtering

“…These results highlighted the possibility that high energy-storage density could be obtained in PMN-PT relaxor ferroelectrics. Moreover, capacitors based on films are likely to exhibit better energy-storage performance than bulk ceramic, due to the higher BDS of thin films [15,16]. Hence, in present work, PMN-PT 90/10 relaxor ferroelectric thin films were prepared on LaNiO 3 /Si (100) bottom electrode by the radio-frequency (RF) magnetron sputtering technique.…”

Tailoring antiferroelectricity with high energy-storage properties in Bi0.5Na0.5TiO3–BaTiO3 ceramics by modulating Bi/Na ratio

“…Compared with ferroelectric materials (FE) and linear dielectrics (DE), antiferroelectric materials (AFE) have lager energy storage density due to their higher saturated polarization and nearly zero remnant polarization [4][5][6][7][8]. As a consequence, anti-ferroelectric dielectric materials have attracted increasing attention due to their excellent electric properties for high energy storage capacitors and pulsed power capacitors applications.…”

Phase transition and energy storage performance in Ba-doped PLZST antiferroelectric ceramics

“…In order to tailor the dielectric properties, A-and B-site compositional modifications in PLZST system with a ABO 3 perovskite-structure were usually employed [10,11]. Recoverable energy density (W re ) of 61 J/cm 3 with an efficiency of 33 % had been demonstrated in AFE PLZT thin films under an applied field of &4.3 MV/cm [12]. However, the energy density of AFE ceramics were usually \2 J/cm 3 in previous studies due to lower dielectric polarization and lower break-down strength [13,14].…”