Temperature-Dependent Electrical Characteristics of Ni/Au Vertical Schottky Barrier Diodes on β-Ga₂O₃ Epilayers

Abstract

Temperature dependent current transport mechanism in Ni/β-Ga2O3 Schottky Barrier Diodes was studied using current-voltage (I-V) and capacitance-voltage (C-V) characterization techniques in the range of 78–350 K. Schottky barrier height ϕ b0 and ideality factor ɳ from I-V characteristics were found to be 1.27 eV and 1.12, respectively, at room temperature. Plots of barrier height and ideality factor with inverse of temperature show strong temperature dependency and a deviation from barrier height obtained from C-V characteristics. The temperature dependence of barrier height and ideality factor assigned to barrier inhomogeneity at Ni/β-Ga2O3 interface, and modulated by the potential fluctuation model. Diode turn-on voltage and turn-on resistance at 300 K were found to be 1.08 eV and 7.80 mΩ-cm2, respectively. A large rectification ratio of the order of 1012 was obtained at room temperature and also the rectification ratio of the order of 109 was consistent over the whole temperature range (78–350 K).

Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films

“…The growing demand for high-performance power electronic devices is seeing an enormous thrust for advanced wide-bandgap semiconductor materials such as GaN, Ga 2 O 3, and SiC. Ga 2 O 3 has received huge attention from the scientific community owing to its material properties such as an ultra-wide bandgap, an extremely high Baliga's figure of merit, and a large breakdown field [1][2][3][4][5]. The crystallization of Ga 2 O 3 material has been reported in α, β, γ, ε, δ, and κ phases [6,7].…”

Wide range temperature-dependent (80–630 K) study of Hall effect and the Seebeck coefficient of β -Ga2O3 single crystals

“…The Raman measurements (LabRAM HR Horiba Jobin Yvon) were carried out with 532 nm excitation wavelength. Circular Ohmic contact pads of Ti/Au (20/80 nm) bilayer were fabricated in the cleanroom environment using an ultra-high vacuum electron beam evaporation system [20]. The circular contact pads of 0.5 mm diameter were fabricated at the two opposite edges of rectangular samples (2×5 mm 2 ) for thermoelectric measurements, and at four corners of square samples (5×5 mm 2 ) in van der Pauw geometry for electrical characterizations (separate pieces from the same wafer).…”

Low Temperature Modeling of Ni/β-Ga2O3 Schottky Barrier Diode Interface

“…For example, Redy et al 13 examined the temperature-dependent I− V characteristics of Au/Ni/β-Ga 2 O 3 SBD using thermionic emission mechanism. A 2.76 ideality factor was obtained at 100 K. Also, Sheoran et al 14 V) characteristics in a temperature range of 78−350 K. They also obtained an ideality factor of about 3.46 at 100 K with the consideration of thermionic current. In the mentioned works, they related this high value to the effect of barrier inhomogeneities at the Ni/β-Ga2O3 interface.…”

“…The high ideality factor value is related to the tunneling effect in agreement with the literature high extracted values at low temperatures. 13,14 Therefore, the extraction method of η from the total current might be considered. In this work, FOM parameters are extracted from the thermionic current component only.…”