Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Pham, Hūng Viêt; Tran, Hiep N.; Holland, Anthony S.; Partridge, J. G.

doi:10.1007/s11664-019-06963-8

Cited by 6 publications

(4 citation statements)

References 40 publications

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“…Here Io is saturation current, V applied voltage, q electron charge, T, absolute temperature, a contact area, k Boltzmann constant, Φb Schottky barrier height, n is the ideality factor and A** is the Richardson coefficient of the semiconductor. For n-6H-SIC used here, this coefficient is equal to 194 Acm -2 K -2 (Pham, Tran, Holland, & Partridge, 2019). If n ideality factor and barrier height Φb expressions are written from Equations 1 and 2, respectively; expressions can be written.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Güzel

2021

Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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In this paper, the 6H-SiC/MEH-PPV/Al Schottky diode with polymer interface was fabricated and characterized using current-voltage data in the temperature range 80-400 K. Important parameters of the fabricated diode such as ideality factor, barrier height was calculated from current-voltage measurements. The saturation current also was determined from the plots obtained from experimental results. In addition, the series resistance of the diode was calculated by using Cheung and Norde methods. On the other hand, the calculated diode characteristics were discussed by comparing with the each other and literature. Strong dependence of the calculated characteristics on temperature has been determined.

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Section: Resultsmentioning

confidence: 99%

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Güzel

2021

Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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“…The high behavior of n values is attributed to many events such as the presence of the interfacial film layer, a wide distribution of low BH patches or barrier inhomogeneous, series resistance and interface states. 31,32 The BH ( Φ b ) value of the Al/poly(NOEMA)/ x wt% nanographene/p-Si/Al diode at dark is found to be between 0.228 and 0.64. The values found for the ideality factor ( n ) and the BH ( Φ b ) are presented in Table 3.…”

Section: Resultsmentioning

confidence: 99%

Electrical properties, characterization, and preparation of composite materials containing a polymethacrylate with α-naphthyl side group and nanographene fillers

Abubakar

Biryan

Demirelli

2019

Journal of Thermoplastic Composite Materials

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2-(Naphthalene-1-yl oxy)-2-oxoethyl methacrylate (NOEMA) was synthesized from reaction of naphthalene-1-yl 2-chloroacetate and sodium methacrylate and its homopolymer was prepared by free-radical polymerization method at 60°C. The glass transition temperature of pure poly(NOEMA) was estimated as 102°C by differential scanning calorimetry technique, whereas that of poly(NOEMA) containing 10 wt% nanographene was 83°C. While pure poly(NOEMA) from thermogravimetric analysis measurements was indicating a decomposition at 290°C, poly(NOEMA) composite containing 10 wt% nanographene showed thermal decomposition temperature at 261°C. Semiconducting composites of poly(NOEMA) have been prepared by adding nanographene particles to poly(NOEMA) for preparing nanocomposites with different weight percentages (2, 3, 4, 5, and 10 wt%). The dielectric constant, ∊′, and dielectric loss factor, ∊″, of pure poly(NOEMA) were 3.66 and 0.052, respectively, whereas those of poly(NOEMA) containing 10 wt% nanographene were 186 and 210,152, respectively. Alternating current (AC) conductivity of pure poly(NOEMA) was 2.03 × 10−9 S cm−1, whereas that of poly(NOEMA) containing 10 wt% nanographene was 0.00134 S cm−1. AC conductivity mechanism of poly(NOEMA)/10 wt% nanographene composite indicated the correlated barrier hopping model. Activation energy values of poly(NOEMA)/ x wt% nanographene composites was estimated to be between 4.783 eV and 0.209 eV. The polymer composite/p-Si thin-film heterojunction diode properties have been investigated from current–voltage at room temperature. The electrical parameters of the prepared diodes such as ideality factor ( n), the barrier height (BH; Φ b), rectification ratio, and reverse saturation current ( I o) were investigated at dark and room temperature. The ideality factor ( n) value of the Al/poly(NOEMA)/ x wt% nanographene/p-Si/Al diode for dark was found to be between 5.147 and 7.504, respectively. The BH ( Φ b) value of the Al/poly(NOEMA)/ x wt% nanographene/p-Si/Al diode at dark was found to be between 0.228 and 0.64.

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“…In this equation, I 0 refers to the reverse saturation current, and A and A * are the active diode area and the Richardson constant (194 A.cm −1 K 2 for GC), respectively [73]. q, b AE , k, T, V and Rs refer to the electron charge, barrier height, the Boltzmann constant, temperature in Kelvin, applied voltage, and the series resistance, respectively.…”

Section: Electrical Analysis Of the Ag/mnpc/gc/ag Photodiodementioning

confidence: 99%

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

et al. 2023

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The aim of this work is to provide an alternative to optoelectronic devices that use carbon and organic materials. To achieve this, we coated a modified MnPc organic semiconductor compound onto a graphite-like carbon (GC) thin film using the thermal evaporation technique, and fabricated an organic-based, highly light-sensitive MnPc/GC hybrid heterojunction. The heterojunction had a transmittance of approximately 60% in the visible region, an absorption coefficient of ~106 m-1, and an energy band gap of 2.6 eV. Subsequently, Ag contacts were grown on the surface of each layer, and the Ag/MnPc/GC/Ag photodiode was subjected to fundamental electrical analysis at various light intensities and a ±3 V applied potential. Analysis in a dark environment revealed that the photodiode had a rectification ratio of 2.59 x 103, a series resistance of 28 Ω, and a shunt resistance of 4.17 x 104 Ω, as calculated from Ohm's law. The diode ideality factor and barrier height of the photodiode were determined from thermionic emission theory to be 5.60 and 0.71 eV, respectively, and it was observed that these decreased with increasing light intensity. The photodetector parameters of the MnPc/GC hybrid photodiode were determined under positive and negative applied potentials at various light intensities. The highest photocurrent, photoconductive responsivity, photosensitivity, and specific detectivity were determined to be 1.512 x 10-1 A, 11.52 A.W-1, 9.83 x 105, and 2.48 x 1012 Jones, respectively, which were significantly higher than those reported in literature for organic and inorganic-based photodiodes. Based on the findings, it was concluded that the Ag/MnPc/GC/Ag photodiode holds promise as an alternative for sensors, solar cells, photodetectors, and optoelectronic communications applications.

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Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Cited by 6 publications

References 40 publications

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Electrical properties, characterization, and preparation of composite materials containing a polymethacrylate with α-naphthyl side group and nanographene fillers

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

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