Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Abstract

In this paper, the 6H-SiC/MEH-PPV/Al Schottky diode with polymer interface was fabricated and characterized using current-voltage data in the temperature range 80-400 K. Important parameters of the fabricated diode such as ideality factor, barrier height was calculated from current-voltage measurements. The saturation current also was determined from the plots obtained from experimental results. In addition, the series resistance of the diode was calculated by using Cheung and Norde methods. On the other hand, the calculated diode characteristics were discussed by comparing with the each other and literature. Strong dependence of the calculated characteristics on temperature has been determined.