Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes

Nabiev, R.F.; Vail, E.C.; Chang-Hasnain, Constance J.

doi:10.1109/2944.401202

Cited by 17 publications

(10 citation statements)

References 28 publications

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“…The typical values of for GaInAlAs QW lasers on InP at 1.55 m and for InGaAsP QW lasers on InP at 1.3 m are 106 K [53] and 64 K, [52] respectively. By contrast, for InGaAs QW lasers on GaAs substrates emitting at 980 nm, the values of (in the 20 C-60 C range) can be extremely high [54]. Further studies are still required to understand further the controlling mechanisms in achieving a high design.…”

Section: Current Injection Efficiency Internal Loss and Materialmentioning

confidence: 99%

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Tansu

Chang

Takeuchi

et al. 2002

IEEE J. Quantum Electron.

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Abstract-Characteristic temperature coefficients of the threshold current ( 0 ) and the external differential quantum efficiency ( 1 ) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current ( ) and the external differential quantum efficiency ( 1 ) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold ( th ) and transparency ( tr ) current density, the carrier injection efficiency ( inj ) and external ( ) differential quantum efficiency, the internal loss ( ), and the material gain parameter ( ). The temperature analysis is performed on low-threshold current density ( = 1.17-1.19 m)InGaAs-GaAsP-GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for 0 and 1 are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers.

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Section: Current Injection Efficiency Internal Loss and Materialmentioning

confidence: 99%

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Tansu

Chang

Takeuchi

et al. 2002

IEEE J. Quantum Electron.

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“…Since the increased carrier population in the barrier region does not contribute to the optical gain, the differential gain decreases rapidly at high temperatures. This decrease in gain strongly reduces the modulation bandwidth [13]. The differential gain plays a central role in determining the fundamental frequency response of semiconductor lasers since the intrinsic direct modulation speed varies as the square root of the differential gain at the operating carrier density and wavelength.…”

Section: Temperature Dependencementioning

confidence: 99%

“…10, OCTOBER 1999 shown in (12), at the bottom of the page, between the test laser signal and the pump signal . The optical modulation response can be written in a nor malized form (optical) (13) where (14) (15)…”

Section: Rate Equations For Opticalmentioning

confidence: 99%

Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Keating

Jin

Chuang

et al. 1999

IEEE J. Quantum Electron.

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Abstract-We present theory and experiment for high-speed optical injection in the absorption region of a quantum-well laser and compare the results with those of the electrical injection in cluding carrier transport effect. We show that the main difference between the two responses is the low-frequency roll-off. By using both injection methods, we obtain more accurate and consistent measurements of many important dynamic laser parameters, which include the differential gain, carrier lifetime, � factor, and gain compression factor. Temperature-dependent data of the test laser are presented which show that the most dominant effect is the linear degradation of differential gain and injection efficiency with increasing temperature. While the �-factor is insensitive to temperature variation for multiple-quantum-well lasers, we find that the carrier capture time and nonlinear gain suppression coefficient decreases as temperature increases.

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“…Secondly, as the injection current increased, exponential increment of emission wavelength is evident in unbonded LDs. Higher carrier density in the quantum well increased carrier absorption at the facet [12,13]. Hence, temperature at the facet was increased and the wavelength shifted higher.…”

Section: Electroluminescence Measurementmentioning

confidence: 96%

Parametric investigation of laser diode bonding using eutectic AuSn solder

Teo

Ling

et al. 2007

Thin Solid Films

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Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes

Cited by 17 publications

References 28 publications

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Parametric investigation of laser diode bonding using eutectic AuSn solder

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Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes

Cited by 17 publications

References 28 publications

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ &lt; 1.17 μm) quantum-well lasers

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ &lt; 1.17 μm) quantum-well lasers

Temperature dependence of electrical and optical modulation responses of quantum-well lasers

Parametric investigation of laser diode bonding using eutectic AuSn solder

Contact Info

Product

Resources

About

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers