Temperature dependent current- and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique

Tuning the Electrical Properties of Tungsten Oxide Thin Films Deposited by Reactive Magnetron Sputtering

“…The silica (SiO 2 ) was a native oxide layer, which was spontaneously formed on the Si surface. We did not perform any particular treatment other than cleaning the samples with alcohol and our deposits were made on this interfacial SiO 2 native oxide layer with a thickness of a few manometers (2-5 nm) [18]. This thickness was negligible compared to the thickness of the WO x thin films (~200 nm).…”

“…WO x is a promising interfacial material for MOS-type devices because of its remarkable electrical, optical, thermal and chemical stability compared to other oxide-type materials [15][16][17]. Recently, Baltakesmez et al [18] showed the influence of temperature on the characteristics of the capacitance-voltage (C-V) curves of W-WO 3 -Si structures for different WO 3 films. Tutov [6] also studied the C-V electrical characteristics of an Al-WO 3 -Si structure that was used as a humidity sensor.…”

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

“…A * value obtained from the temperature dependence of the I − V characteristics may be affected by the lateral inhomogeneity of the barrier, and the fact that it is different from the theoretical value may be connected to a value of the real effective mass that is different from the calculated one. Therefore, these undesirable findings clearly indicate the deviation from pure TE current mechanism and hence further investigations are required to understand the observed behavior [15,61,[71][72][73]77,96,153,[180][181][182].…”

“…This approach can successfully explain usually anomalous behaviors observed in the I − V characteristics, such as a reduce of SBH and an increment in ideality factor due to decrease in temperature, the difference of SBH determined from different methods, the nonlinear Richardson activation curve. The other approach by Tung [65] and Sullivan [98,107,108] dominates at small bias and especially low temperature; and assumes the presence of somesmall patches withthe placed low SBH in the mean SBH area [72,73,103].…”

“…Therefore, some studies have also intensified on the nonideal I − V characteristics [17,21,[56][57][58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73]. There are many studies on the diode parameters as a function of the sample temperature [18,65,[74][75][76][77][78][79][80][81][82].…”