Temperature‐dependent characteristics of InP‐RTD‐based microwave amplifier IC

Abstract

A reflection-type microwave amplifier using InP-based resonant tunnelling diodes (RTDs) has been designed and fabricated. The implemented amplifier shows a low dc-power consumption of 270 μW with RF gains of more than 11 dB at 5.61 GHz. Temperature-dependent characteristics of the RTD amplifier have been investigated at a high temperature. With increasing temperature from 25 to 100°C, the centre frequency shift was measured to be 60 MHz. The RF gains (S 21 /S 12) and the return losses (S 11 /S 22) of the amplifier decreased from 11.45/11.32 and −7.96/−8.11 dB at 25°C to 7.06/6.91 and −11.36/−11.15 dB at 100°C, respectively. The S-parameter degradation phenomena are shown to mainly arise from the temperature dependence of the negative differential resistance (R D) characteristic for the fabricated RTD.

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

“…It is mainly due to the above reasons; the PA's performance degradation for the changes in temperature and humidity conditions is a hot topic of research [40]- [48]. However, most of the published papers are focused on the PA's performances degradations limited to the individual characteristic temperature and humidity, for instance, 85℃/85%RH [40], 121℃/100%RH [40], 0℃ [41], 25℃ [42], 50℃ [49], 80℃ [50], 100℃ [43], 130℃/60%RH [44], 130℃/40%RH [44]. Measurement of a PA's temperature and humidity dependence at specific temperature/humidity points does not provide enough information to model the relationships of the PA's performance degradations in actual environmental conditions [34].…”