Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Abstract

The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.

Solar-Blind Avalanche Photodetector Based On Single ZnO–Ga2O3 Core–Shell Microwire

“…Considering that the thickness of the shell is approximately 500 nm, the applied voltage of −10 V leads to an electric field reaching 200 kV/cm. Under such a high electric field, the electrons will gain much kinetic energy and impact Ga 2 O 3 lattice to induce the avalanche breakdown. , As shown in Figure b, this device is a typical diode, and presents an off state in the reverse bias and an on state in the forward bias. When it is in the reverse bias, the dark current is very low, and the photoinduced carriers are involved in an avalanche multiplication process; therefore, the photocurrent is much larger than the dark current.…”

“…Upon the increasing the reverse bias, the electron-accelerating region is broadened. The avalanche multiplication is affected by the impact ionization of the electrons, which strongly depends on the applied electric field. − The electric potential distribution of the device is shown in Figure e. When a reverse bias voltage is applied on the device, the potential drop mainly occurs in the region of the Ga 2 O 3 shell under the Ti/Au electrode.…”

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