Solar blind avalanche photodetector based on the cation exchange growth of β-Ga2O3/SnO2 bilayer heterostructure thin film

Mahmoud, Waleed E.

doi:10.1016/j.solmat.2016.03.015

Cited by 175 publications

(70 citation statements)

References 33 publications

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“…This explains the excellent solar‐blind DUV detecting property of the β‐Ga 2 O 3 /Si APD device. In another work, the cation exchange growth mechanism reduced the lattice mismatch along the interface between two UWBG semiconductors . The resultant β‐Ga 2 O 3 /SnO 2 APD showed high selectivity to 254 nm DUV light with excellent photoresponse characteristics with responsivity, EQE, avalanche gain, detectivity, linear dynamic range (LDR), and response speed were 2.3 × 10 3 A W −1 , 4.48 × 10 6 , 1.7 × 10 5 , 1.7 × 10 15 cm W −1 s −1 , 126 dB, and 25 µs, respectively.…”

Section: Ga2o3mentioning

confidence: 98%

“…In this part, we will introduce Ga 2 O 3 /semiconductor hybrid structure, another equally important geometry for DUV detection. Up to now, a variety of semiconductors that have been combined with Ga 2 O 3 to form heterojunction photodiodes include GaN, SiC, Nb:SrTiO 3 (NSTO), Si, ZnO, SnO 2 , diamond, CuGaSe 2 , and so forth. For example, heterojunctions can be formed by coating β‐Ga 2 O 3 films on 6H‐SiC or GaN substrates through gallium evaporation in oxygen plasma .…”

Section: Ga2o3mentioning

confidence: 99%

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Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

385

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Ga2o3mentioning

confidence: 98%

Section: Ga2o3mentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

385

261

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“…Thermal evaporation was used to deposit an In electrode on the SnO 2 part of a β-Ga 2 O 3 / SnO 2 heterojunction photodetector [65]. A bilayer of Ti and Au was also deposited on the β-Ga 2 O 3 thin film using evaporation.…”

Section: Indium (In)mentioning

confidence: 99%

“…Because large voltages are applied, the device consumes large amounts of power. There is no persistent photoconductivity [65] and the quantum efficiency is high. The detectivity and selectivity are also high, and the response and decay times are fast.…”

Section: Avalanche Photodiodementioning

confidence: 99%

Ga2O3 Nanowire Synthesis and Device Applications

Alhalaili¹,

Mao²,

Islam³

2018

Novel Nanomaterials - Synthesis and Applications

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In recent years, gallium oxide nanowires have been used in many scientific disciplines due to their outstanding and unique properties. Several applications have focused on incorporating gallium oxide nanowires in devices to improve their performance and efficiency. These distinctive structures bring new opportunities to several research fields and applications such as optoelectronics, electronics, and chemistry. This chapter provides a basic overview of gallium oxide's properties and the growth process of gallium oxide nanowires, with an emphasis on varied applications and future challenges.

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“…Due to its favorable electronical and optical properties, Ga 2 O 3 is regarded as a promising material for several applications in electronic [1,2] or optoelectronic devices [3], photodetectors [4,5] and sensors [2,[6][7][8][9]. The large band gap energy (4.8 eV) of Ga 2 O 3 [2] contributes to its superior photocatalytic performance [10,11].…”

Section: Introductionmentioning

confidence: 99%

Structural transformation of Ga2O3-based catalysts during photoinduced reforming of methanol

Vass

Pászti

Bálint

et al. 2017

Materials Research Bulletin

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Highlights  β-Ga 2 O 3 is active in the methanol photocatalytic reforming under UV-vis irradiation.  PtO x co-catalyst is formed on the surface of Ga 2 O 3 by calcination of Pt(NH 3) 4 (NO 3) 2.  Introduction of PtO x co-catalyst results in enhanced hydrogen production.  In-situ metallic Pt formation during the photoinduced reaction is proved by XPS.  PtO x /Ga 2 O 3 transforms to Pt 0 /GaOOH during the photoinduced reaction.

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Solar blind avalanche photodetector based on the cation exchange growth of β-Ga2O3/SnO2 bilayer heterostructure thin film

Cited by 175 publications

References 33 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Ga2O3 Nanowire Synthesis and Device Applications

Structural transformation of Ga2O3-based catalysts during photoinduced reforming of methanol

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