Temperature dependence of transport properties of evaporated indium tin oxide films

Huang, Kai-Feng; Uen, T. M.; Gou, Y. S.; Huang, Chao-Yuan; Yang, Hyo-Sik

doi:10.1016/0040-6090(87)90116-7

Cited by 43 publications

(10 citation statements)

References 9 publications

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“…From Equation 6 the position of the Fermi level at 300 K can be obtained to yield $ E_{\rm c} - E_{\rm F} = 33.1 {\rm meV}\le 2k_{\rm B} T \approx 51.8 {\rm meV} $ , indicating that the ZnO NW used in this work is a weak degenerate semiconductor. We thus assume that the lattice vibration scattering mobility is inversely proportional to the temperature 20–22. To gain a qualitative understanding, we note that the conduction is mainly contributed by electrons near the Fermi level and the mobility of the electron can be expressed as $ \mu = {{e}\over{{m_{\rm n}^ *}}}{{{\left\langle {\tau v^2} \right\rangle}}\over{{\left\langle {v^2} \right\rangle}}} = {{{e\tau_{\rm F}}}\over{{m_{\rm n}^ *}}} $ , where v is the velocity of the electron, <> denotes statistical average, and $ \tau_{\rm F} $ is the time related to the mean free path for electrons near the Fermi level and is velocity independent.…”

Section: Resultsmentioning

confidence: 99%

Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current–Voltage Measurements on Individual ZnO Nanowires

Yang

Zhang

Wei

et al. 2011

Adv Funct Materials

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Section: Resultsmentioning

confidence: 99%

Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current–Voltage Measurements on Individual ZnO Nanowires

Yang

Zhang

Wei

et al. 2011

Adv Funct Materials

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“…This is anticipated as the crystallite size is significantly larger than the mean free path of our charge carriers, typically a few nm 42 , and at high carrier concentrations changes in the levels of ionised impurity scattering will dominate the charge transport 43 . There is however a change in carrier concentration and charge mobility consistent with the observed changes in preferential orientation at low doping concentrations.…”

Section: Resultsmentioning

confidence: 99%

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

et al. 2016

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© 2016 The Royal Society of Chemistry.The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1-3 at%. Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using AC Hall as a measurement technique we probe the electronic properties of our doped films, deconvoluting the impact of doping on the measured charge carrier concentrations and Hall mobility. We focus on the low doping range i.e. 0.1-1 at%, where we observe unexpected variations in charge carrier concentration and mobility and propose a mechanism to explain our observations. In this doping range highly resistive films are formed hence we highlight AC Hall as a reliable and highly reproducible technique for analysing electrical properties and subsequently elucidate the doping mechanisms. The implementation of a simple, post-deposition heat treatment demonstrated on our AZO results in typical films with charge carrier concentrations exceeding >1019 cm-3, and electron mobilities >10 cm2 V-1 s-1 and stability exceeding 180 days. We describe in detail the nature of the defect chemistry and the role of intrinsic defects and show, that despite significant variations in dopant species and grain boundary concentrations, that the defect chemistry dominates the electrical characteristics

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“…It is clear that n remains constant in a wide T range from liquid-helium temperatures up to 300 K. In the as-deposited sample, the n value approaches ∼ 1 × 10 21 cm −3 . Temperature independent n in the ITO material has been reported by a number of groups [61,[74][75][76].…”

Section: Relevant Electronic Parametersmentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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Temperature dependence of transport properties of evaporated indium tin oxide films

Cited by 43 publications

References 9 publications

Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current–Voltage Measurements on Individual ZnO Nanowires

Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current–Voltage Measurements on Individual ZnO Nanowires

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

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